CX
'J.E.iiE.u tSs-ml-donductoi ZPioducti,
u
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
POWER TRANSISTORS
20 Amp, 150 V, Double Diffused NPN Mesa
2N6354
2N6496
FEATURES
• Collector-Base Voltage: up to 150V
• Peak Collector Current: 30A
• Rise Time: ^ 500ns (
. Fall Time-. < 500ns ? @ 'c "P '°
12
«
DESCRIPTION
These double diffused glass passivated
mesa power transistors combine fast-
switching, low saturation voltage and
rugged £
s
/b capability. They are de-
signed for use in switching regulators,
converters, inverters and switching-
control amplifiers.
ABSOLUTE MAXIMUM RATINGS"
Collector-Base Voltage, V
C|
Collector-Emitter Sustaining" Voltage, V
CER
2M8334
150V
|SUS
,
3NI4M
150V
130V
(1) .
y
CEO(SUS)
Emitter-Base Voltage, V
EBO
." .'...'..'
Collector Current, l
c
continuous
Collector Current, I
CM
peak
Base Current, I, continuous
Power Dissipation, 25°C Case
Operating and Storage Temperature Range
-
120V
110V
6,5V
7V
IDA
ISA
12A
5A
5A
140W .
140W
,—65 to 200°C
(1) With R
BE
< 500
* JEDEC registered values.
MECHANICAL SPECIFICATIONS
NOTE:
Lndi m»y ba toktorwl to
within
'/it"
of
DIM
provided temperature-
time
exposure it l«« then 2£0°C
lorl
2N6354, 2N649B
TO-3
_|
A
B
C
0
E
r
G
H
1
Ini.
.875 MAX.
.135 MAX
mm.
22 23 MAX
3 43 MAX
250-.450
312 WIN
635-1143
7,92 MIN
038-.043 DIA
188 MAX. RAO.
1 177-1 197
0.97-109 DIA.
4.78 MAX RAO
.656-675
205-225
420- 440
-525 MAX SAO
.151- 161 DIA.
K
L
M
2990-3040
1664-17 15
521-572
1067-11.18
13.34 MAX RAO.
3 84-4 09 DIA
NJ Serm-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
not,ce mtonnat.ontum.shcd by NJ Semi-Conductors is believed to be both accurate and reliable at the time of gZ to
press However NJ Serm-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Electric*! Specifications (at 25'C unless noted)
JN63S4
Test
2N649C
Unit!
Test Conditions
Symbol
MIN
MAX
MIN
MAX
—
D.C. Current Gain
(Note 1)
D.C. Current Gain
(Note 1)
D.C. Current Gain
(Note 1)
Collector Saturation
Voltage (Note 1)
Collector Saturation
Voltage (Note 1)
Collector Saturation
Voltage (Note 1)
Base Saturation
Voltage (Note 1)
Base Saturation
Voltage (Note 1}
Collector-Emitter
Sustaining Voltage
(Note 2)
Collector-Emitter
Sustaining Voltage
(Note 2)
Collector-Emitter
Sustaining Voltage
(Note 2)
Emitter-Base Voltage
Collector Cutoff
Current
Collector Cutoff
Current
Collector Cutoff
Current
Collector Cutoff
Current, 125°C
Collector Cutoff
Current, 150°C
Emitter Cutoff
Current
Magnitude of Small
Signal Forward —
Current Transfer
Ratio
Collector Capacitance
Thermal Resistance:
Junction-to-Case
Notn:
h
FE
h
fE
I>FE
V
CE
-
l
c
= 2A, V
CE
= 5V
l
c
= 5A. V
CE
= 2V
l
c
= 8A, V
CE
= 2V
l
c
=
10A,
V
ce
= 2V
l
c
=
10A,
V
CE
=
5V
l
c
=
12A,
V
CE
:=
5V
20
150
12
100
10
100
—
D.f>
(<it]
(«t>
—
I I
I
1.0
-
—
I
—
—
1.0
—
1.3*
V
V
V
V
l
c
= 5A, 1, = .5A
l
c
= 8A. 1, = .8A
I
0
=
IDA,
1, =
1.0A
t
£
=
12A,
I
B
=
1.2A
lc_= 20A,
1, = 5A
V
CE
-
V
CE
lull
-_
—
V
BE
l
c
= 5A, I
B
=
0.5A
l
c
= 8A, 1, =
0.8A
l
c
=
IDA,
\i =
1A
l
c
=
20A,
I
6
= 5A
l
c
=
0.2A
l
c
=
0.2A
V
8£
=
-1.5V
l, = 0
R
BE
= 100 «
R
BE
= 50
a,
l
r
=
0.2A
R
BE
= 100 n. l
c
=
0.2A
I
E
= 5mA
IE = 50mA
V
CB
=r
150V
V
C£
= 55V
V
CE
= 70V
V
CE
=
100V
V
CE
- 110V, V
aE
=
-1.5V
(ill)
I
2.0
2.0
I
- 100
w
V
B£ (»t)
—
I
V
V
V
V
CEO
|iu<)
120
—
—
VCEX isi")
-
-
—
V
\J
— 130
130
6.5
—
7.0
—
—
20
20
5
—
—
"CES |,ui|
V
VEBO
'ceo
—
V
—
mA
mA
'CEO
—
'CEV
—
10
20
—
—
—
—
25
—
mA
V
C£
= 130V, V
BE
= 0
V
CE
= 140V, V
BE
= -1-5V
V
CE
= 140V, V
8E
=s 0
'cEV
—
-
mA
mA
V
Ci
=
140V
V
CE
=
85V,
V
BE
= -1.5V
V
CE
= 100V, V
HF
=
-1.5V
V
CE
= 130V, V
BE
= 0V
VBE = -5V
V
BE
= -6.5V
V
B£
= -7V
V
CE
=
10V,
l
c
= 2A, f = 5 MHz
V
ce
=
10V,
l
c
= 1A, f = 10 MHz
'CEV
U
—
5.0
—
50
12
—
mA
-
W
Cob
8.0
—
'— '
300
.25
— 300
1.25
pF
jp
[\Ht
V
c
, =
10V,
f = 1 MHz
V
CE
=
10V,
l
c
= 10A
V
CE
-
20V,
l
c
= 1A
"l)JC
—
1. Pulse width = 25<VS; duty cycle £1%.
2. Sustaining Voltage. Measured at a high current point where collector-emitter voltage is lowest. Current pulse
length si 50>S; duty cycle s 1%-
Voltage clamped at maximum collector-emitter voltage
* JEDEC registered values.
Microcontroller MCU
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