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2N6362

Description
Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3
CategoryDiscrete semiconductor    The transistor   
File Size98KB,2 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric View All

2N6362 Overview

Trans GP BJT NPN 150V 25A 3-Pin(2+Tab) TO-3

2N6362 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
Base Number Matches1
CX
'J.E.iiE.u tSs-ml-donductoi ZPioducti,
u
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
POWER TRANSISTORS
20 Amp, 150 V, Double Diffused NPN Mesa
2N6354
2N6496
FEATURES
• Collector-Base Voltage: up to 150V
• Peak Collector Current: 30A
• Rise Time: ^ 500ns (
. Fall Time-. < 500ns ? @ 'c "P '°
12
«
DESCRIPTION
These double diffused glass passivated
mesa power transistors combine fast-
switching, low saturation voltage and
rugged £
s
/b capability. They are de-
signed for use in switching regulators,
converters, inverters and switching-
control amplifiers.
ABSOLUTE MAXIMUM RATINGS"
Collector-Base Voltage, V
C|
Collector-Emitter Sustaining" Voltage, V
CER
2M8334
150V
|SUS
,
3NI4M
150V
130V
(1) .
y
CEO(SUS)
Emitter-Base Voltage, V
EBO
." .'...'..'
Collector Current, l
c
continuous
Collector Current, I
CM
peak
Base Current, I, continuous
Power Dissipation, 25°C Case
Operating and Storage Temperature Range
-
120V
110V
6,5V
7V
IDA
ISA
12A
5A
5A
140W .
140W
,—65 to 200°C
(1) With R
BE
< 500
* JEDEC registered values.
MECHANICAL SPECIFICATIONS
NOTE:
Lndi m»y ba toktorwl to
within
'/it"
of
DIM
provided temperature-
time
exposure it l«« then 2£0°C
lorl
2N6354, 2N649B
TO-3
_|
A
B
C
0
E
r
G
H
1
Ini.
.875 MAX.
.135 MAX
mm.
22 23 MAX
3 43 MAX
250-.450
312 WIN
635-1143
7,92 MIN
038-.043 DIA
188 MAX. RAO.
1 177-1 197
0.97-109 DIA.
4.78 MAX RAO
.656-675
205-225
420- 440
-525 MAX SAO
.151- 161 DIA.
K
L
M
2990-3040
1664-17 15
521-572
1067-11.18
13.34 MAX RAO.
3 84-4 09 DIA
NJ Serm-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
not,ce mtonnat.ontum.shcd by NJ Semi-Conductors is believed to be both accurate and reliable at the time of gZ to
press However NJ Serm-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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