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AT28C64E-25TL

Description
EEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28
Categorystorage    storage   
File Size319KB,12 Pages
ManufacturerAtmel (Microchip)
Environmental Compliance
Download Datasheet Parametric View All

AT28C64E-25TL Overview

EEPROM, 8KX8, 250ns, Parallel, CMOS, PDSO28, PLASTIC, TSOP-28

AT28C64E-25TL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAtmel (Microchip)
Parts packaging codeTSOP
package instructionTSOP1,
Contacts28
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time250 ns
Other features10K OR 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; SELF-TIMED BYTE WRITE CYCLE
Data retention time - minimum10
Durability10000 Write/Erase Cycles
JESD-30 codeR-PDSO-G28
JESD-609 codee3
length11.8 mm
memory density65536 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.55 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width8 mm
Maximum write cycle time (tWC)0.2 ms
Features
Fast Read Access Time – 120 ns
Fast Byte Write – 200 µs or 1 ms
Self-timed Byte Write Cycle
– Internal Address and Data Latches
– Internal Control Timer
– Automatic Clear Before Write
Direct Microprocessor Control
– READY/BUSY Open Drain Output
– DATA Polling
Low Power
– 30 mA Active Current
– 100 µA CMOS Standby Current
High Reliability
– Endurance: 10
4
or 10
5
Cycles
– Data Retention: 10 Years
5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
64K (8K x 8)
Parallel
EEPROMs
AT28C64
AT28C64X
Description
The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile elec-
trically erasable and programmable read only memory with popular, easy-to-use fea-
tures. The device is manufactured with Atmel’s reliable nonvolatile technology.
(continued)
Pin Configurations
Pin Name
A0 - A12
CE
OE
WE
I/O0 - I/O7
RDY/BUSY
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
Ready/Busy Output
No Connect
Don’t Connect
TSOP
Top View
OE
A11
A9
A8
NC
WE
VCC
RDY/BUSY (or NC)
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PDIP, SOIC
Top View
RDY/BUSY (or NC)
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
LCC, PLCC
Top View
A7
A12
RDY/BUSY (or NC)
DC
VCC
WE
NC
I/O1
I/O2
VSS
DC
I/O3
I/O4
I/O5
14
15
16
17
18
19
20
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
5
6
7
8
9
10
11
12
13
4
3
2
1
32
31
30
29
28
27
26
25
24
23
22
21
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
Rev. 0001H–12/99
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
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