Transistors
2SC2631
Silicon NPN epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1123
■
Features
•
Satisfactory linearity of forward current transfer ratio h
FE
•
High collector-emitter voltage (Base open) V
CEO
•
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
0.7
±0.1
Unit: mm
5.0
±0.2
4.0
±0.2
0.7
±0.2
12.9
±0.5
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
150
150
5
50
100
750
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
°C
°C
0.45
+0.15
–0.1
2.5
+0.6
–0.2
1
2 3
2.5
+0.6
–0.2
0.45
+0.15
–0.1
5.1
±0.2
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Noise voltage
Symbol
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
NV
Conditions
I
C
=
100
µA,
I
B
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
100 V, I
E
=
0
V
CE
=
5 V, I
C
=
10 mA
I
C
=
30 mA, I
B
=
3 mA
V
CB
=
10 V, I
E
= −10
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
10 V, I
C
=
1 mA, G
V
=
80 dB
R
g
=
100 kΩ, Function
=
FLAT
150
160
3
300
130
Min
150
5
1
330
1
Typ
Max
Unit
V
V
µA
V
MHz
pF
mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
R
130 to 220
S
185 to 330
2.3
±0.2
Publication date: March 2003
SJC00117BED
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•
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