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2N4273

Description
Power Bipolar Transistor, 2.5A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size290KB,4 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

2N4273 Overview

Power Bipolar Transistor, 2.5A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN

2N4273 Parametric

Parameter NameAttribute value
Parts packaging codeTO-66
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)2.5 A
Collector-emitter maximum voltage140 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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