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2N6752

Description
Power Bipolar Transistor, 10A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size259KB,7 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric Compare View All

2N6752 Overview

Power Bipolar Transistor, 10A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

2N6752 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-based maximum capacity250 pF
Collector-emitter maximum voltage450 V
ConfigurationSINGLE
Minimum DC current gain (hFE)8
JEDEC-95 codeTO-204AA
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment150 W
Maximum power dissipation(Abs)75 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Maximum off time (toff)3400 ns
Maximum opening time (tons)500 ns
VCEsat-Max3 V
Base Number Matches1

2N6752 Related Products

2N6752 2N6753 2N6754 2N6751
Description Power Bipolar Transistor, 10A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
Is it Rohs certified? incompatible incompatible incompatible incompatible
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknow unknow unknow unknow
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A 10 A 10 A
Collector-based maximum capacity 250 pF 250 pF 250 pF 250 pF
Collector-emitter maximum voltage 450 V 500 V 500 V 400 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 8 8 8 8
JEDEC-95 code TO-204AA TO-204AA TO-204AA TO-204AA
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
JESD-609 code e0 e0 e0 e0
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Maximum power consumption environment 150 W 150 W 150 W 150 W
Maximum power dissipation(Abs) 75 W 75 W 75 W 75 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 15 MHz 15 MHz 15 MHz 15 MHz
Maximum off time (toff) 3400 ns 3400 ns 3400 ns 3400 ns
Maximum opening time (tons) 500 ns 500 ns 500 ns 500 ns
VCEsat-Max 3 V 3 V 3 V 3 V
Base Number Matches 1 1 1 1

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