SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 692, REV. -
2N7336
HERMETIC POWER MOSFET COMBINATION
N-CHANNEL / P-CHANNEL QUAD
(2 EACH)
DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP.
MAXIMUM RATINGS--N/P - CHANNEL
RATING
GATE TO SOURCE VOLTAGE
CONTINUOUS DRAIN CURRENT
ALL RATINGS ARE AT T
A
= 25C UNLESS OTHERWISE SPECIFIED.
SYMBOL
V
GS
I
D
I
DM
T
OP
/T
STG
R
JC
P
D
¡
MIN.
-
-
-
-55
-
-
V
GS
=10V, T
C
= 25C
V
GS
=10V, T
C
= 100C
PULSED DRAIN CURRENT
@ T
C
= 25C
OPERATING AND STORAGE TEMPERATURE
THERMAL RESISTANCE JUNCTION TO CASE
(PER FET)
TOTAL DEVICE DISSIPATION @ T
C
= 25C (PER FET)
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
I
D
= 0.6A, V
GS
= 10V@T
J
= 25C
FORWARD TRANSCONDUCTANCE
V
DS
15Vdc, I
DS
= 0.6A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x max rating, Vdc, V
GS
= 0Vdc
V
GS
= 0Vdc, T
J
= 125C
GATE TO BODY LEAKAGE CURRENT
V
GS
=
20Vdc,
V
DS
= 0Vdc
TOTAL GATE CHARGE
(V
GS
= 10 Vdc,
GATE TO SOURCE CHARG
V
DS
= 0.5 x max. rating,
GATE TO DRAIN CHARGE
I
D
= 1.0Adc)
TURN ON DELAY TIME
(V
DD
= 50V,
RISE TIME
I
D
= 1.0Adc,
TURN OFF DELAY TIME
R
G
= 24W)
FALL TIME
FORWARD VOLTAGE,
(I
S
= 1.0Adc, V
GS
= 0V)
REVERSE RECOVERY TIME (I
F
= 1.0Adc, V
DD
50Vdc
REVERSE RECOVERY CHARGE
di/dt = 100A/msec)
INPUT CAPACITANCE
(V
DS
= 25 Vdc,
OUTPUT CAPACITANCE
V
GS
= 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz)
TY
P.
-
-
-
-
-
-
MAX.
UNITS
Volts
Amps
20
1.0 / -0.75
0.6 / -0.5
4.0 / 3.0
+150
17
1.4
Amps(pk)
C
C/W
Watts
ELECTRICAL CHARACTERISTICS – N-CHANNEL
BV
DSS
R
DS(ON)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(ON)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
100
-
0.86
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
180
82
15
-
0.7
-
25
250
+100
-100
15
7.5
7.5
20
25
40
40
1.5
200
0.83
-
Volts
W
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-mail Address - sales@sensitron.com
2N7336
SENSITRON
DATA SHEET 692,
REVISION -
ELECTRICAL CHARACTERISTICS – P-CHANNEL
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V
GS
= 0V, I
D
= -1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
I
D
= 0.5A, V
GS
= -10V@T
J
= 25C
FORWARD TRANSCONDUCTANCE
V
DS
-15Vdc, I
DS
= -0.5A
ZERO GATE VOLTAGE DRAIN CURRENT
V
DS
= 0.8 x max rating, Vdc, V
GS
= 0Vdc
V
GS
= 0Vdc, T
J
= 125C
GATE TO BODY LEAKAGE CURRENT
V
GS
=
20Vdc,
V
DS
= 0Vdc
TOTAL GATE CHARGE
(V
GS
= -10 Vdc,
GATE TO SOURCE CHARG
V
DS
= 0.5 x max. rating,
GATE TO DRAIN CHARGE
I
D
= -0.75Adc)
TURN ON DELAY TIME
(V
DD
= -50V,
RISE TIME
I
D
= -0.75Adc,
TURN OFF DELAY TIME
R
G
= 24W)
FALL TIME
FORWARD VOLTAGE,
(I
S
= 1.0Adc, V
GS
= 0V)
REVERSE RECOV. TIME (I
F
= -0.75Adc, V
DD
-50Vdc
REVERSE RECOVERY CHARGE
di/dt
-100A/msec)
INPUT CAPACITANCE
(V
DS
-25 Vdc,
OUTPUT CAPACITANCE
V
GS
= 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz)
BV
DSS
R
DS(ON)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(ON)
t
f
V
SD
t
rr
Q
rr
C
iss
C
oss
C
rss
-100
-
0.67
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
200
85
30
-
1.4
-
-25
-250
+100
-100
15
7.0
8.0
30
60
40
40
-5.5
200
9.0
-
Volts
W
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
MECHANICAL DIMENSIONS: in Inches / mm
.200
.125
(5.08
3.18)
.200 (5.08)Max
.060 (1.52
.015 .38)
.005 (.13) Min
1
2
3
.785 Max.
(19.94)
4
5
6
7
14
13
12
11
10
9
8
.098 (2.49)Max
.023 (.58
.014 .36)
.100 (2.54) BSC
.065
.038
(1.65
.96)
.150 (3.81)Min
.310 (7.87
.220 5.59)
.320 (8.13
.290 7.37)
.015 (.38
.008 .20)
CER-DIP-14
(Q1, Q3) N-CHANNEL
(Q2, Q4) P-CHANNEL
MOSFET QUAD IN 14
PIN CERDIP
PACKAGE
PIN 1
D
Q1
PIN 8
D
Q3
PIN 2
S
Q1
PIN 9
S
Q3
PIN 3
G
Q1
PIN 10
G
Q3
PIN 4
N/C
PIN 11
N/C
PIN 5
G
Q2
PIN 12
G
Q4
PIN 6
S
Q2
PIN 13
S
Q4
PIN 7
D
Q2
PIN 14
D
Q4
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
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operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
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use at a value exceeding the absolute maximum rating.
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•
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Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
•
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•
E-Mail Address - sales@sensitron.com
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