Transistor
2SC2632
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SA1124
5.9±0.2
Unit: mm
4.9±0.2
q
q
q
2.54±0.15
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
Ratings
150
150
5
100
50
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
0.45
–0.1
1.27
1.27
+0.2
13.5±0.5
0.7
–0.2
+0.3
Satisfactory linearity of forward current transfer ratio h
FE
.
High collector to emitter voltage V
CEO
.
Small collector output capacitance C
ob
.
0.7±0.1
8.6±0.2
s
Features
0.45
–0.1
+0.2
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
(Ta=25˚C)
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= 100V, I
E
= 0
I
C
= 0.1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 5V, I
C
= 10mA
I
C
= 30mA, I
B
= 3mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100kΩ, Function = FLAT
150
160
3
300
150
5
130
330
1
V
MHz
pF
mV
min
typ
max
1
Unit
µA
V
V
*
h
FE
Rank classification
R
130 ~ 220
S
185 ~ 330
h
FE
Rank
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
1
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