Ordering number : EN0572F
2SA1016, 1016K / 2SC2362, 2362K
SANYO Semiconductors
DATA SHEET
2SA1016, 1016K
2SC2362, 2362K
Specifications
( ) : 2SA1016, 1016K
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Low-Noise Amp
Applications
Conditions
2SA1016, 2SC2362
(--)120
(--)100
(--)5
(--)50
(--)100
400
125
--55 to +125
2SA1016K, 2SC2362K
(--)150
(--)120
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Conditions
VCB=(--)80V, IE=0A
VEB=(-
-)4V, IC=0A
VCE=(--)6V, IC=(-
-)1mA
VCE=(--)6V, IC=(-
-)1mA
VCB=(--)10V, f=1MHz
IC=(--)10mA, IB=(--)1mA
IC=(--)10μA, IE=0A [2SA1016, 2SC2362]
IC=(--)10μA, IE=0A [2SA1016K, 2SC2362K]
IC=(--)1mA, RBE=∞ [2SA1016, 2SC2362]
IC=(--)1mA, RBE=∞ [2SA1016K, 2SC2362K]
IE=(-
-)10μA, IC=0A
(--)120
(--)150
(--)100
(--)120
(--)5
160*
(110)130
(2.2)1.8
(--)0.5
Ratings
min
typ
max
(--)1.0
(--)1.0
960*
MHz
pF
V
V
V
V
V
V
Unit
μA
μA
Continued on next page.
*
: The 2SA1016,1016K/2SC2362, 2362K are classified by 1mA hFE as follows :
Rank
hFE
F
160 to 320
G
280 to 560
H
480 to 960
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71608GA TI IM TC-00001502 / 70502TN (KT)/71598HA (KT)/3187AT/3075KI/1313KI No.0572-1/5
2SA1016, 1016K / 2SC2362, 2362K
Continued from preceding page.
Parameter
Noise Level
Noise Peak Level
Symbol
VNO(ave)
VNO(peak)
Conditions
VCC=30V, IC=1mA, Rg=56kΩ,VG=77dB/1kHz
VCC=30V, IC=1mA, Rg=56kΩ,VG=77dB/1kHz
Ratings
min
typ
max
35
200
Unit
mV
mV
Package Dimensions
unit : mm (typ)
7522-002
5.0
4.0
4.0
0.45
0.5
0.6
2.0
0.45
14.0
5.0
0.44
1 2 3
1 : Emitter
2 : Collector
3 : Base
1.3
1.3
SANYO : NP
--12
IC -- VCE
2SA1016, 1016K
0
μ
A
--35
0
μ
A
--30
μ
A
--250
-
12
IC -- VCE
2SC2362, 2362K
--10
10
Collector Current, IC -- mA
--8
Collector Current, IC -- mA
250
μ
A
200
μ
A
8
A
-200
μ
--6
A
--150
μ
--100
μ
A
6
150
μ
A
--4
4
100
μ
A
50
μ
A
--2
--50
μ
A
2
0
0
IB=0
μ
A
--10
--20
--30
--40
--50
ITR02951
0
0
10
20
30
IB=0
μ
A
40
50
ITR02952
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.0572-2/5
2SA1016, 1016K / 2SC2362, 2362K
--100
IB -- VBE
2SA1016, 1016K
VCE=--5V
100
IB -- VBE
2SC2362, 2362K
VCE=5V
--80
80
Base Current, IB --
μA
Base Current, IB --
μA
0
--0.2
--0.4
--0.6
--0.8
--1.0
ITR02953
--60
60
--40
40
--20
20
0
0
0
0.2
0.4
0.6
0.8
1.0
ITR02954
Base-to-Emitter Voltage, VBE -- V
1000
7
5
3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
1000
hFE -- IC
2SA1016, 1016K
VCE=--6V
7
5
2SC2362, 2362K
VCE=6V
DC Current Gain, hFE
2
100
7
5
3
2
10
7
5
--0.1
DC Current Gain, hFE
2
3
5
2
3
5
2
3
5
3
2
100
7
5
3
2
10
0.1
--1.0
--10
Collector Current, IC -- mA
5
--100
ITR02957
2
3
5
1.0
2
3
5
10
2
3
5
f T -- IC
Collector Current, IC -- mA
5
100 2
ITR02958
f T -- IC
Gain-Bandwidth Product, f T -- MHz
3
2
Gain-Bandwidth Product, f T -- MHz
2SA1016, 1016K
VCE=--6V
3
2
2SC2362, 2362K
VCE=6V
100
7
5
100
7
5
3
2
1.0
3
2
1.0
2
3
5
7
10
2
3
5
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
10
7
ITR02955
10
7
Cob -- VCB
Collector Current, IC -- mA
ITR02956
Cob -- VCB
2SA1016, 1016K
f=1MHz
2SC2362, 2362K
f=1MHz
Output Capacitance, Cob -- pF
5
Output Capacitance, Cob -- pF
2
3
5
7
2
3
5
5
3
3
2
2
1.0
7
--1.0
1.0
7
1.0
--10
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
ITR02959
Collector-to-Base Voltage, VCB -- V
100
ITR02960
7
No.0572-3/5
2SA1016, 1016K / 2SC2362, 2362K
100k
5
Contour of NF
2SA1016, 1016K
f=10Hz
Δf=1
Hz
VCE=--6V
4dB
NF
500
PC -- Ta
dB
12
Signal Source Resistance, Rg --
Ω
3
2
10k
5
3
2
1.0k
5
3
2
Collector Dissipation, PC -- mW
400
15
dB
8dB
6K
0 1 2K
, 1 36
16 , 2
10 2
A 36
2 S SC 2
2
300
2dB
6
8
d
12
dB
B
15
dB
dB
2
4d
dB
B
d
=1
B
6dB
200
100
0.1k
--0.001 2 3
0
5 --0.01 2 3
5
--0.1 2 3
5
Collector Current, IC --
--1.0 2 3 5 --10
mA
ITR02961
100
0
25
50
75
100
125
150
ITR02962
Ambient Temperature, Ta --
°C
Contour of NF
100k
5
Contour of NF
5
Signal Source Resistance, Rg --
Ω
Signal Source Resistance, Rg --
Ω
3
2
10k
5
3
2
1.0k
5
3
2
2SA1016, 1016K
f=100Hz
Δf=1
Hz
VCE=--6V
4dB
3
2
10
5
3
2
1.0
5
3
2SC2362, 2362K
VCE=6V
f=10Hz
dB
14
dB
15
B
d
12
8dB
B
8d
NF
B
6d
B
4d
NF
6d
8d
B
12
B
15
dB
dB
dB
12
dB
=1
2dB
4d
B
B
2d
1d
B
.7d
=0
1dB
2d
B
B
2d
B
4d
B
6dB
12
14
6d
8d
B
B
dB
2
5
--0.1 2 3
5
--1.0 2 3 5 --10
mA
ITR02963
dB
0.1k
--0.001 2 3
5 --0.01 2 3
0.1
1.0
2 3
5
10
2 3
5
100 2 3
5
Collector Current, IC --
Collector Current, IC --
μA
1000 2 3 5 10000
ITR02964
Contour of NF
100k
5
100
Contour of NF
5
Signal Source Resistance, Rg --
Ω
Signal Source Resistance, Rg --
Ω
3
2
10k
5
3
2
1.0k
5
3
2
2SA1016, 1016K
f=1kHz
Δf=1
Hz
VCE=--6V
1dB
dB
0.7
3
2
10
5
3
2
1.0
5
3
2
0.1
2SC2362, 2362K
f=1kHz
VCE=6V
dB
15
B
8d
12
4dB
B
2d
6dB
B
6d
B
4d
B
2d
dB
=1
dB
B
8d
NF
0.7
d
2d
4d
B
B
6
8d
dB
B
1
15
2dB
dB
1d
B
B
NF
=1
dB
4d
2
B
dB
6d
B
12
8dB
dB
14
dB
2 3
5
10
2 3
5
100
2 3
0.1k
--0.001 2 3
5 --0.01 2 3
5
--0.1 2 3
5
Collector Current, IC --
--1.0 2 3 5 --10
mA
ITR02965
1.0
Collector Current, IC --
μA
5 1000 2 3 5 10000
ITR02966
Contour of NF
100k
5
Signal Source Resistance, Rg --
Ω
3
2
10k
5
3
2
1.0k
5
3
2
2SA1016, 1016K
f=10kHz
Δf=1
Hz
VCE=--6V
dB
15
dB
12
B
8d
0.
2d
4d
B
B
NF
1d
B
7d
B
.5
=0
4dB
2dB
1dB
dB
6dB
0.7
dB
6d
B
8d
B
12
dB
0.1k
--0.001 2 3
dB
15
5 --0.01 2 3
5
--0.1 2 3
5
Collector Current, IC -- mA
--1.0 2 3 5
--10
ITR02967
No.0572-4/5
2SA1016, 1016K / 2SC2362, 2362K
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
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mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
PS No.0572-5/5
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