Power Bipolar Transistor, 2A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin,
| Parameter Name | Attribute value |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 2 A |
| Collector-emitter maximum voltage | 250 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 25 |
| JEDEC-95 code | TO-66 |
| JESD-30 code | O-MBFM-P2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 40 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 60 MHz |
| VCEsat-Max | 3 V |
| Base Number Matches | 1 |
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