EEWORLDEEWORLDEEWORLD

Part Number

Search

2N6372

Description
Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL CAN-3
CategoryDiscrete semiconductor    The transistor   
File Size32KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

2N6372 Online Shopping

Suppliers Part Number Price MOQ In stock  
2N6372 - - View Buy Now

2N6372 Overview

Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL CAN-3

2N6372 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1439168941
package instructionMETAL CAN-3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2017-11-27 08:59:36
Maximum collector current (IC)6 A
Collector-emitter maximum voltage80 V
Minimum DC current gain (hFE)20
JEDEC-95 codeTO-66
JESD-30 codeO-MBFM-P2
JESD-609 codee0
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
This Material Copyrighted By Its Respective Manufacturer

2N6372 Related Products

2N6372 2N6374 2N3738 2N4911
Description Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL CAN-3 Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL CAN-3 Power Bipolar Transistor, 1A I(C), 225V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL CAN-3 Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
package instruction METAL CAN-3 FLANGE MOUNT, O-MBFM-P2 METAL CAN-3 TO-66, 2 PIN
Reach Compliance Code unknown compliant compli unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 6 A 6 A 1 A 1 A
Collector-emitter maximum voltage 80 V 40 V 225 V 60 V
Minimum DC current gain (hFE) 20 20 40 20
JEDEC-95 code TO-66 TO-66 TO-66 TO-66
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of terminals 2 2 2 2
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN
surface mount NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON
Is it lead-free? Contains lead - Contains lead Contains lead
Is it Rohs certified? incompatible - incompatible incompatible
Objectid 1439168941 8059220587 - 1439168460
Contacts 3 - 2 2
JESD-609 code e0 - e0 e0
Certification status Not Qualified - Not Qualified Not Qualified
Terminal surface TIN LEAD - TIN LEAD TIN LEAD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1147  1951  404  2615  2374  24  40  9  53  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号