INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2N5344
DESCRIPTION
·High
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= -250V(Min)
·High
Switching Speed
·High
Current-Gain Bandwidth Product-
: f
T
= 60MHz(Min)@ I
C
= -0.1A
APPLICATIONS
·Designed
for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Total Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
-250
-250
-5
-1.0
-0.5
40
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
4.38
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
CONDITIONS
I
C
= -10mA ; I
B
= 0
I
C
= -1A; I
B
= -0.2A
I
C
= -1A; I
B
= -0.2A
V
CB
= -250V; I
E
= 0
V
CE
= -225V; V
BE(
off
)
= -1.5V
V
CE
= -225V; V
BE(
off
)
= -1.5V,T
C
= 150℃
V
EB
= 5V; I
C
= 0
I
C
= -0.5A ; V
CE
= -5V
I
C
= -1A ; V
CE
= -5V
I
C
= -0.1A ; V
CE
= -20V
I
E
= 0; V
CB
= -10V
25
7
60
MIN
-250
2N5344
MAX
UNIT
V
-3.0
-1.5
-0.1
-0.1
-1.0
-0.1
100
V
V
mA
mA
mA
MHz
200
pF
Switching times
t
on
t
off
Turn-On Time
I
C
= -0.5A, I
B1
= -I
B2
= -0.05A;
V
CC
= -100V
Turn-Off Time
0.7
0.2
μs
μs
isc Website：www.iscsemi.cn
2
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