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2SA1018R

Description
Small Signal Bipolar Transistor, 0.07A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, TO-92-B1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size73KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SA1018R Overview

Small Signal Bipolar Transistor, 0.07A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, TO-92-B1, 3 PIN

2SA1018R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.07 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.75 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
Transistors
2SA1018
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC1473
Features
0.7
±0.1
0.7
±0.2
Unit: mm
5.0
±0.2
5.1
±0.2
4.0
±0.2
High collector-emitter voltage (Base open) V
CEO
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−250
−200
−5
−70
−100
750
150
−55
to
+150
Unit
V
V
V
mA
mA
mW
°C
°C
0.45
+0.15
–0.1
2.5
+0.6
–0.2
1
2 3
2.3
±0.2
12.9
±0.5
0.45
+0.15
–0.1
2.5
+0.6
–0.2
1 : Emitter
2 : Collector
3 : Base
TO-92-B1 Package
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CEO
V
EBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= −100 µA,
I
B
=
0
I
E
= −1 µA,
I
C
=
0
V
CE
= −120
V, I
B
=
0
V
CE
=
−10
V, I
C
=
−5
mA
I
C
= −50
mA, I
B
= −5
mA
V
CB
= −10
V, I
E
=
10 mA, f
=
200 MHz
V
CB
=
−10
V, I
E
=0, f
=
1 MHz
50
10
60
Min
−200
−5
−1
220
−1.5
Typ
Max
Unit
V
V
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
60 to 150
R
100 to 220
Publication date: January 2003
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