2N6772 datasheet, PDF - EEWORLD Datasheet

2N6772: DescriptionTRANSISTOR,BJT,NPN,350V V(BR)CEO,1A I(C),TO-220AB; CategoryDiscrete semiconductor The transistor; File Size357KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2N6772 Overview

TRANSISTOR,BJT,NPN,350V V(BR)CEO,1A I(C),TO-220AB

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	_compli
Factory Lead Time	1 week
Maximum collector current (IC)	1 A
Configuration	Single
Minimum DC current gain (hFE)	10
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	16 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	10 MHz
Base Number Matches	1

	2N6772	2N6771
Description	TRANSISTOR,BJT,NPN,350V V(BR)CEO,1A I(C),TO-220AB	TRANSISTOR,BJT,NPN,300V V(BR)CEO,1A I(C),TO-220AB
Is it Rohs certified?	incompatible	incompatible
Reach Compliance Code	_compli	_compli
Maximum collector current (IC)	1 A	1 A
Configuration	Single	Single
Minimum DC current gain (hFE)	10	10
JESD-609 code	e0	e0
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	16 W	16 W
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	10 MHz	10 MHz
Base Number Matches	1	1

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