2N6376 datasheet, PDF - EEWORLD Datasheet

2N6376: DescriptionTRANSISTOR,BJT,NPN,40V V(BR)CEO,1.5A I(C),TO-9VAR; CategoryDiscrete semiconductor The transistor; File Size30KB，1 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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2N6376 Overview

TRANSISTOR,BJT,NPN,40V V(BR)CEO,1.5A I(C),TO-9VAR

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	compli
Maximum collector current (IC)	1.5 A
Configuration	Single
Minimum DC current gain (hFE)	30
JESD-609 code	e0
Maximum operating temperature	200 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	300 MHz
Base Number Matches	1

	2N6376	2N6375	2N3734
Description	TRANSISTOR,BJT,NPN,40V V(BR)CEO,1.5A I(C),TO-9VAR	TRANSISTOR,BJT,NPN,40V V(BR)CEO,1.5A I(C),TO-18	TRANSISTOR,BJT,NPN,30V V(BR)CEO,1.5A I(C),TO-5
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	compli	compli	compli
Maximum collector current (IC)	1.5 A	1.5 A	1.5 A
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	30	30	30
JESD-609 code	e0	e0	e0
Maximum operating temperature	200 °C	200 °C	200 °C
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	1 W	0.58 W	1 W
surface mount	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	300 MHz	300 MHz	300 MHz
Base Number Matches	1	1	-

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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