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D3SB60

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size152KB,2 Pages
ManufacturerFagor Electrónica
Download Datasheet Parametric View All

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Rectifier Diode

D3SB60 Parametric

Parameter NameAttribute value
MakerFagor Electrónica
Reach Compliance Codecompliant
D3SB40.......D3SB100
4.0 Amp. Glass Passivated Bridge Rectifier
Plastic
Case
.118(3.0)X45
0
Voltage
400 to 1000 V
.
.147(3.7)
.130(3.3)
Current
4.0
R
.996(25.3)
.972(24.7)
.602(15.3)
.579(14.7)
.134(3.4)
.122(3.1)
.176(4.37)
.156(3.96)
.382(9.7)
.366(9.3)
.068(1.73)
.060(1.52)
.043(1.1)
.035(0.9)
.709(18)
.669(17)
.303(7.7)
.287(7.3)
• Glass Passivated Junction Chips.
.030(0.75)
.022(0.55)
.087(2.2)
.071(1.8)
• Mounting Instructions
•
High temperature soldering guaranteed: 260 ºC – 10 sc.
•
Recommended mounting torque: 8 Kg.cm.
•
•
•
•
•
Lead and polarity identifications.
Case: Molded Plastic.
Ideal for printed circuit board (P
.C.B.).
High surge current capability.
The plastic material carries U/L recognition 94 V-O.
Maximum Ratings, according to IEC publication No. 134
D3SB
40
D3SB
60
600
420
D3SB
80
800
560
D3SB
100
1000
700
V
RRM
V
RMS
I
F(AV)
I
FSM
V
DIS
I
2
t
Peak recurrent reverse voltage (V)
Maximum RMS voltage (V)
Max. Average forward current with heatsink
without heatsink
10 ms. peak forward surge current
(Jedec Method)
Dielectric strength (terminals to case, AC 1 min.)
Current squared time (rating for fusing)
(1ms.<t<10ms. Tc = 25ºC)
Operating temperature range
Storage temperature range
400
280
4.0 A at 115ºC Tc.
3.0 A at 40 ºC
120 A
2000 V
60 A2sec
T
j
T
stg
V
F
I
R
R
th (j-c)
R
th (j-a)
– 55 to + 150 °C
– 55 to +150 ºC
Electrical Characteristics at Tamb = 25°C
Max. forward voltage drop per diode at I
F
= 2.0 A
I
F
= 4.0 A
Max. instantaneous reverse current at V
RRM
MAXIMUM THERMAL RESISTANCE
Junction-Case. With Heatsink.
Junction-Ambient. Without Heatsink.
1.00 V
1.10 V
5µA
5.5 ºC/W
22 ºC/W
May - 09

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