Transys
Electronics
L I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA1318
TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
P
CM
: 0.5
W (Tamb=25℃)
1. EMITTER
2.
COLLECTOR
Collector current
: -0.2
A
I
CM
Collector-base voltage
V
V
(BR)CBO
: -60
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3.
BASE
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-10
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
I
E
=
-10
µA,
I
C
=0
V
CB
=
-40
V, I
E
=0
V
EB
=
-5
V, I
C
=0
V
CE
=
-6
V, I
C
=
-1
mA
V
CE
=
-6
V, I
C
=
-0.1
mA
I
C
=
-100
mA, I
B
=
-10
mA
I
C
=
-100
mA, I
B
=
-10
mA
V
CE
=
-6
V, I
C
=
-10
mA
V
CB
=
-6
V, I
E
=0, f=
1
MHz
-60
-50
-6
-0.1
-0.1
100
70
-0.3
-1
200
4.5
560
µA
µA
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
R
100-200
S
140-280
T
200-400
U
280-560
GD32 MCU
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