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2N2812

Description
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size31KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N2812 Overview

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN

2N2812 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid1439169140
Parts packaging codeTO-61
package instructionTO-61, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)10 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-61
JESD-30 codeO-MUPM-X3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON

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Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Parts packaging code TO-61 TO-61 TO-61 TO-63 TO-61
package instruction TO-61, 3 PIN POST/STUD MOUNT, O-MUPM-X3 POST/STUD MOUNT, O-MUPM-X3 POST/STUD MOUNT, O-MUPM-D3 TO-61, 3 PIN
Contacts 3 3 3 3 3
Reach Compliance Code unknown compli compli compli unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 10 A 10 A 7.5 A 20 A 5 A
Collector-emitter maximum voltage 60 V 80 V 60 V 40 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40 40 50
JEDEC-95 code TO-61 TO-61 TO-61 TO-61 TO-61
JESD-30 code O-MUPM-X3 O-MUPM-X3 O-MUPM-X3 O-MUPM-D3 O-MUPM-X3
JESD-609 code e0 e0 e0 e0 e0
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Package body material METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND
Package form POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT POST/STUD MOUNT
Polarity/channel type NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED SOLDER LUG UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER UPPER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Base Number Matches - 1 1 1 -

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