28C04AF-20I/J datasheet, PDF - EEWORLD Datasheet

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28C04AF-20I/J: Description512 X 8 EEPROM 5V, 200 ns, CDIP24, CERDIP-24; Categorystorage storage; File Size59KB，8 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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28C04AF-20I/J Overview

512 X 8 EEPROM 5V, 200 ns, CDIP24, CERDIP-24

28C04AF-20I/J Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	DIP
package instruction	DIP, DIP24,.6
Contacts	24
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum access time	200 ns
Other features	AUTOMATIC WRITE; BULK ERASE; DATA RETENTION > 10 YEARS
command user interface	NO
Data polling	YES
Data retention time - minimum	10
Durability	10000 Write/Erase Cycles
JESD-30 code	R-GDIP-T24
JESD-609 code	e0
memory density	4096 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	24
word count	512 words
character code	512
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512X8
Output characteristics	3-STATE
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP24,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
Maximum write cycle time (tWC)	0.2 ms
Base Number Matches	1

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28C04A

4K (512 x 8) CMOS EEPROM

FEATURES

• Fast Read Access Time—150 ns

• CMOS Technology for Low Power Dissipation

- 30 mA Active

- 100

A Standby

• Fast Byte Write Time—200

s or 1 ms

• Data Retention >200 years

• Endurance - Minimum 10

Erase/Write Cycles

- Automatic Write Operation

- Internal Control Timer

- Auto-Clear Before Write Operation

- On-Chip Address and Data Latches

• Data Polling

• Chip Clear Operation

• Enhanced Data Protection

- V

Detector

- Pulse Filter

- Write Inhibit

• 5-Volt-Only Operation

• Organized 512x8 JEDEC standard pinout

- 24-pin Dual-In-Line Package

- 32-pin PLCC Package

• Available for Extended Temperature Ranges:

- Commercial: 0˚C to +70˚C

- Industrial: -40˚C to +85˚C

PACKAGE TYPES

DIP

I/O0

I/O1

I/O2

•1

Vcc

I/O7

I/O6

I/O5

I/O4

I/O3

Vcc

28C04A

PLCC

I/O0

I/O7

I/O6

28C04A

•

Pin 1 indicator on PLCC on top of package

BLOCK DIAGRAM

I/O0

I/O7

DESCRIPTION

The Microchip Technology Inc. 28C04A is a CMOS 4K

non-volatile electrically Erasable and Programmable

Read Only Memory (EEPROM). The 28C04A is

accessed like a static RAM for the read or write cycles

without the need of external components. During a

“byte write”, the address and data are latched internally,

freeing the microprocessor address and data bus for

other operations. Following the initiation of write cycle,

the device will go to a busy state and automatically

clear and write the latched data using an internal con-

trol timer. To determine when a write cycle is complete,

the 28C04A uses Data polling. Data polling allows the

user to read the location last written to when the write

operation is complete. CMOS design and processing

enables this part to be used in systems where reduced

power consumption and reliability are required. A com-

plete family of packages is offered to provide the utmost

ﬂexibility in applications.

Data Protection

Circuitry

Chip Enable/

Output Enable

Control Logic

Auto Erase/Write

Timing

I/O1

I/O2

Vss

I/O3

I/O4

I/O5

Data

Poll

Input/Output

Buffers

Program Voltage

Generation

Decoder

Y Gating

Decoder

4K bit

Cell Matrix

1996 Microchip Technology Inc.

DS11126F-page 1

This document was created with FrameMaker 4 0 4

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