2SA1319R datasheet, PDF - EEWORLD Datasheet

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2SA1319R: DescriptionSmall Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, NP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size46KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SA1319R Overview

Small Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, NP, 3 PIN

2SA1319R Parametric

Parameter Name	Attribute value
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	160 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.7 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	120 MHz
Base Number Matches	1

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Ordering number:ENN1334D

PNP/NPN Epitaxial Planar Silicon Transistors

2SA1319/2SC3332

High-Voltage Switching Applications

Features

· Hgih breakdown voltage.

· Excellent h

linearity.

· Wide ASO and highly resistant to breakdown.

· Adoption of MBIT process.

Package Dimensions

unit:mm

2003B

[2SA1319/2SC3332]

5.0

4.0

Switching Test Circuit

PW=20µs

D.C.≤1%

INPUT

50Ω

100µF

--5V

470µF

100V

20IB1=--20IB2=IC=300mA

(For PNP, the polarity is reversed.)

1.3

IB1

IB2

OUTPUT

0.45

0.5

14.0

333Ω

0.6

2.0

5.0

0.45

0.44

1 : Emitter

2 : Collector

3 : Base

SANYO : NP

( ) : 2SA1319

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Conditions

Ratings

(–)180

(–)160

(–)6

(–)0.7

(–)1.5

700

150

–55 to +150

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

ICBO

IEBO

hFE1

hFE2

VCB=(–)120V, IE=0

VEB=(–)4V, IC=0

VCE=(–)5V, IC=(–)100mA

VCE=(–)5V, IC=(–)10mA

100*

Conditions

Ratings

min

typ

max

(–)0.1

400*

Unit

µA

* : The 2SA1319/2SC3332 are classified by 100mA h

as follows :

Rank

hFE

100 to 200

140 to 280

200 to 400

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/4

2SA1319/2SC3332

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of August, 2002. Specifications and information herein are subject to

change without notice.

PS No.1334-4/4

2SA1319R Related Products

	2SA1319R	2SA1319-T	2SC3332-R	2SC3332S	2SC3332-S	2SC3332T	2SC3332-T	2SA1319-S	2SA1319-R
Description	Small Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, NP, 3 PIN	700mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	700mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	Small Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, NP, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, NP, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, NP, 3 PIN	Small Signal Bipolar Transistor, 0.7A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, NP, 3 PIN	700mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	700mA, 160V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknow	unknow	unknown	unknown	unknown	unknown	unknown	unknow	unknown
Maximum collector current (IC)	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A	0.7 A
Collector-emitter maximum voltage	160 V	160 V	160 V	160 V	160 V	160 V	160 V	160 V	160 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	200	100	140	140	200	200	140	100
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	NPN	NPN	NPN	NPN	NPN	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz	120 MHz
Parts packaging code	TO-92	-	-	TO-92	TO-92	TO-92	TO-92	-	-
Contacts	3	-	-	3	3	3	3	-	-
ECCN code	EAR99	-	-	EAR99	EAR99	EAR99	EAR99	-	-
Maximum power dissipation(Abs)	0.7 W	-	-	0.7 W	0.7 W	0.7 W	0.7 W	-	-
Objectid	-	-	1426751467	1484019289	1484019289	1484019292	1484019292	-	1426751475

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