2N5349 datasheet, PDF - EEWORLD Datasheet

2N5349: DescriptionPower Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin,; CategoryDiscrete semiconductor The transistor; File Size62KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin,

Parameter Name	Attribute value
package instruction	POST/STUD MOUNT, O-MUPM-D4
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	ISOLATED
Maximum collector current (IC)	7 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JEDEC-95 code	TO-111
JESD-30 code	O-MUPM-D4
Number of components	1
Number of terminals	4
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	60 W
Certification status	Not Qualified
surface mount	NO
Terminal form	SOLDER LUG
Terminal location	UPPER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
VCEsat-Max	0.7 V
Base Number Matches	1

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