Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1439169137 |
| Parts packaging code | TO-61 |
| package instruction | TO-61, 3 PIN |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 10 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 20 |
| JEDEC-95 code | TO-61 |
| JESD-30 code | O-MUPM-X3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Transistor component materials | SILICON |
京公网安备 11010802033920号
EEWORLD
