Transistors
2SA1022
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC2295
■
Features
•
High frequency voltage f
T
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
Unit: mm
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
1
2
(0.65)
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−30
−20
−5
−30
200
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
10˚
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: E
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance
(Common emitter)
Symbol
V
BE
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
NF
Z
rb
C
re
Conditions
V
CE
= −10
V, I
C
= −1
mA
V
CB
= −10
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −10
V, I
C
= −1
mA
I
C
= −10
mA, I
B
= −1
mA
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
5 MHz
V
CB
= −10
V, I
E
=
1 mA, f
=
2 MHz
V
CE
= −10
V, I
C
= −1
mA, f
=
10.7 MHz
150
70
−
0.1
300
2.8
22
1.2
Min
Typ
−
0.7
−
0.1
−100
−10
220
Max
Unit
V
µA
µA
µA
V
MHz
dB
Ω
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
B
70 to 140
C
110 to 220
0 to 0.1
0.4
±0.2
5˚
Publication date: February 2003
SJC00009BED
1
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•
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•
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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