Ordering number:ENN1334D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1319/2SC3332
High-Voltage Switching Applications
Features
· Hgih breakdown voltage.
· Excellent h
FE
linearity.
· Wide ASO and highly resistant to breakdown.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2003B
[2SA1319/2SC3332]
5.0
4.0
4.0
Switching Test Circuit
PW=20μs
D.C.≤1%
INPUT
VR
50Ω
+
100μF
--5V
+
470μF
100V
20IB1=--20IB2=IC=300mA
(For PNP, the polarity is reversed.)
1.3
1.3
IB1
RB
IB2
OUTPUT
0.45
0.5
14.0
RL
333Ω
0.6
2.0
5.0
0.45
0.44
1
2
3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
( ) : 2SA1319
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)180
(–)160
(–)6
(–)0.7
(–)1.5
700
150
–55 to +150
Unit
V
V
V
A
A
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
ICBO
IEBO
hFE1
hFE2
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)100mA
VCE=(–)5V, IC=(–)10mA
100*
80
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
400*
Unit
μ
A
μ
A
* : The 2SA1319/2SC3332 are classified by 100mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002TN (KT)/71598HA (KT)/3207KI/N257KI/3135KI/O183KI, TS No.1334-1/4
2SA1319/2SC3332
Continued from preceding page.
Parameter
Gain Bandwidth Product
Common Base Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
fT
C ob
VCE(sat)
VBE(sat)
Conditions
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V
IC=(–)250mA, IB=(–)25mA
(–)180
(–)160
(–)6
(60)50
(900)
1000
(60)60
Ratings
min
typ
120
(11)8
(0.20)
0.12
(–)0.85
(0.5)
0.4
(–)1.2
ma x
Unit
MHz
pF
V
V
V
V
V
ns
ns
ns
IC=(–)250mA, IB=(–)25mA
V(BR)CBO IC=(–)10
μ
A, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)10
μ
A, IC=0
ton
tstg
tf
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
--
800
--
700
IC -- VCE
From top
--200mA
--180mA
--160mA
--140mA
2SA1319
Pulse
800
700
IC -- VCE
From top
100mA
90mA
80mA
70mA
60mA
2SC3332
Pulse
50m
A
Collector Current, IC – mA
Collector Current, IC – mA
--
600
--
500
--
400
--
300
--
200
--
100
0
0
--120mA
--80mA
--60mA
--40mA
--20mA
600
500
400
300
200
100
40mA
30mA
20mA
10mA
--
0.2
--
0.4
--
0.6
--
0.8
Collector-to-Emitter Voltage, VCE – V
IB=0
--
1.0
ITR03218
0
IB=0
0
0.2
0.4
0.6
0.8
1.0
ITR03219
--
800
--
700
IC -- VCE
2SA1319
--5.0mA
Pulse
A
--4.5m
--4.0mA
--3.5mA
--3.0mA
--2.5mA
--2.0mA
Collector-to-Emitter Voltage, VCE – V
1000
IC -- VCE
Collector Current, IC – mA
--
600
--
500
--
400
--
300
--
200
--
100
0
0
Collector Current, IC – mA
800
4.0mA
3.5mA
3.0mA
2.5mA
2SC3332
Pulse
600
2.0mA
400
--1.5mA
--1.0mA
--0.5mA
1.5mA
1.0mA
200
0.5mA
0
--
10
--
20
--
30
--
40
--
50
--
60
Collector-to-Emitter Voltage, VCE – V
IB=0
--
70
--
80
ITR03220
IB=0
0
10
20
30
40
50
60
70
80
Collector-to-Emitter Voltage, VCE – V
Common Base Output Capacitance, Cob – pF
100
7
5
3
2
ITR03221
1000
IC -- VBE
VCE=5V
Cob -- VCB
Collector Current, IC – mA
800
332
2SA
1319
2SC3
600
10
7
5
3
2
2SA
131
9
2SC
333
2
400
200
0
For PNP, minus
sign is omitted.
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR03222
1.0
5
7 1.0
2
3
5
7
10
2
3
5
7
Base-to-Emitter Voltage, VBE – V
Collector-to-Base Voltage, VCB -- V
2
100
ITR03223
No.1334-2/4
BE
1000
7
5
3
2SA1319/2SC3332
2SA1319
Pulse
1000
7
5
3
g
hFE -- IC
hFE -- IC
CB
2SC3332
Pulse
DC Current Gain, hFE
DC Current Gain, hFE
2
2
10V
100
7
5
3
2
10
7
5
3
3
5 7
100
7
5
3
2
10
7
5
VC
--
10
2
3
5
Collector Current, IC – mA
7
--
100
5
fT -- IC
2SA1319
VC
=--
E
2V
2
--10V
5
7
--
1000
2
ITR03224
5V
=2
E
--5V
3
V
3
3
5
7 10
2
3
5
7 100
2
3
5
Collector Current, IC – mA
5
7 1000
2
ITR03225
fT -- IC
2SC3332
Gain-Bandwidth Product, fT – MHz
3
2
Gain-Bandwidth Product, fT – MHz
3
2
VC
E =10
V
V
V CE=10
5V
100
7
5
3
2
5V
100
7
5
3
2
10
5
7
--
10
2
--
100
Collector Current, IC – mA
2
3
5
7
3
5
7
--
1000
10
5
7
10
2
3
5
7
100
2
3
5
ITR03226
5
Collector Current, IC – mA
7 1000
ITR03227
10
5
VCE(sat) -- IC
IC / IB=10
ASO
ICP
Ta=25
°C
Single pulse
3
2
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2
1.0
5
Collector Current, IC – mA
3
1000
5
3
2
100
5
3
2
10
5
3
1.0
2
3
5
7
10
10
1m
10
s
ms
0m
s
2S
A1
31
9
3
2
0.1
DC
op
era
tio
n
2
5
3
2
3
5
7 10
2
3
2
33
C3
S
For PNP, minus sign is omitted.
5
Collector Current, IC – mA
7 100
2
3
5
7 1000
2
ITR03228
2
3
5
7 100
2
3
Collector-to-Emitter Voltage, VCE – V
ITR03229
800
PC -- Ta
Collector Dissipation, P
C
– mW
600
400
200
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR03230
No.1334-3/4
2SA1319/2SC3332
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2002. Specifications and information herein are subject to
change without notice.
PS No.1334-4/4
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