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2SA1683-S

Description
500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, SPA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size40KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SA1683-S Overview

500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, SPA, 3 PIN

2SA1683-S Parametric

Parameter NameAttribute value
Objectid1482934076
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)140
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Ordering number:ENN3012
PNP Epitaxial Planar Silicon Transistors
2SA1683/2SC4414
Low-Frequency General-Purpose Amplifier,
Low-Frequency Power Amplifier Applications
Features
· Adoption of FBET process.
· High breakdown voltage : V
CEO
>80V.
Package Dimensions
unit:mm
2033A
[2SA1683/2SC4414]
4.0
3.0
2.2
0.4
0.5
0.6
1.8
15.0
0.4
0.4
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
0.7
3.0
3.8
0.7
( ) : 2SA1683
1 2
1.3
3
1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
Ratings
(–)100
(–)80
(–)5
(–)500
(–)800
(–)100
300
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)60V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)50mA
VCE=(–)5V, IC=(–)400mA
VCE=(–)10V, IC=(–)10mA
100*
60
120
MHz
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
400*
Unit
µA
µA
* : 2SA1683/2SC4414 are classified by 50mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/5189MO, TS No.3012-1/4

2SA1683-S Related Products

2SA1683-S 2SA1683-R 2SA1683-T 2SC4414-R 2SC4414-T
Description 500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, SPA, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, SPA, 3 PIN 500mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, SPA, 3 PIN 500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, SPA, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SPA, 3 PIN
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3 3 3
Reach Compliance Code unknown unknow unknown unknown unknown
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 80 V 80 V 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 140 100 200 100 200
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type PNP PNP PNP NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz
Objectid 1482934076 - 1482934079 1482934085 1991532346

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