Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.2 A |
| Collector-based maximum capacity | 4 pF |
| Collector-emitter maximum voltage | 20 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 25 |
| JEDEC-95 code | TO-18 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 0.3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 350 MHz |
| Maximum off time (toff) | 75 ns |
| VCEsat-Max | 0.4 V |
| Base Number Matches | 1 |
| 2N834 | 2N3117 | 2N720A | 2N2586 | 2N6430 | 2N3647 | 2N708 | 2N718 | 2N911 | 2N720 | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.05A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 |
| Is it Rohs certified? | incompatible | incompatible | conform to | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | conform to |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compliant | compliant | compli |
| Collector-emitter maximum voltage | 20 V | 60 V | 80 V | 45 V | 200 V | 10 V | 15 V | 30 V | 60 V | 80 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 25 | 400 | 40 | 80 | 50 | 25 | 30 | 40 | 15 | 40 |
| JEDEC-95 code | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 175 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 175 °C | 200 °C | 175 °C |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 0.3 W | 0.36 W | 0.5 W | 0.3 W | 0.5 W | 2 W | 0.36 W | 0.4 W | 0.5 W | 0.4 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 350 MHz | 60 MHz | 50 MHz | 45 MHz | 50 MHz | 350 MHz | 300 MHz | 50 MHz | 50 MHz | 50 MHz |
| ECCN code | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.2 A | 0.05 A | - | 0.03 A | 0.05 A | 0.5 A | - | 0.5 A | 0.5 A | 0.4 A |
| Collector-based maximum capacity | 4 pF | 4.5 pF | 15 pF | 2 pF | 4 pF | - | 6 pF | 35 pF | - | 20 pF |
| JESD-609 code | e0 | e0 | - | e0 | e0 | e0 | e0 | e0 | e0 | - |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
| VCEsat-Max | 0.4 V | 0.35 V | 5 V | 0.5 V | 0.5 V | - | 0.4 V | 1.5 V | 1.2 V | 5 V |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
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