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2N1250

Description
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-53, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size54KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

2N1250 Overview

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-53, 3 PIN

2N1250 Parametric

Parameter NameAttribute value
Parts packaging codeTO-53
package instructionFLANGE MOUNT, O-MBFM-X3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeO-MBFM-X3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment85 W
Maximum power dissipation(Abs)85 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationBOTTOM
Transistor component materialsSILICON
VCEsat-Max5 V
Base Number Matches1
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