2N834 datasheet, PDF - EEWORLD Datasheet

2N834: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size329KB，4 Pages; ManufacturerSemitronics Corp.

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2N834 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN

Parameter Name	Attribute value
Parts packaging code	BCY
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	30 V
Configuration	Single
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	350 MHz
Maximum off time (toff)	75 ns
Maximum opening time (tons)	35 ns
Base Number Matches	1

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