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2N6381

Description
Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size72KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

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2N6381 Overview

Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-63, Metal, 3 Pin,

2N6381 Parametric

Parameter NameAttribute value
Objectid8059220592
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)50 A
Collector-emitter maximum voltage100 V
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-63
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typePNP
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON
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