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SSP4N90A

Description
Power Field-Effect Transistor, 4A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size343KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

SSP4N90A Overview

Power Field-Effect Transistor, 4A I(D), 900V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

SSP4N90A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-220AB
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25
µA
(Max.) @ V
DS
= 900V
Low R
DS(ON)
: 4.181
(Typ.)
1
2
3
SSP4N90A
BV
DSS
= 900 V
R
DS(on)
= 5.0
I
D
= 4 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
C
)
Continuous Drain Current (T
C
=100
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“ from case for 5-seconds
Ο
Ο
Ο
Value
900
4
2.5
1
O
2
O
1
O
1
O
3
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
C
Ο
16
+ 30
_
424
4
12
1.5
120
0.96
- 55 to +150
Ο
C
300
Thermal Resistance
Symbol
R
R
R
θ
JC
θ
CS
θ
JA
Characteristic
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.04
--
62.5
Units
Ο
C
/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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