Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,
| Parameter Name | Attribute value |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 20 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 10 |
| JEDEC-95 code | TO-63 |
| JESD-30 code | O-MUPM-D3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 200 W |
| Maximum power dissipation(Abs) | 200 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | SOLDER LUG |
| Terminal location | UPPER |
| Transistor component materials | SILICON |
| VCEsat-Max | 1.5 V |
| Base Number Matches | 1 |
京公网安备 11010802033920号
EEWORLD
