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2SA1687T-7

Description
2SA1687T-7
CategoryDiscrete semiconductor    The transistor   
File Size119KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SA1687T-7 Overview

2SA1687T-7

2SA1687T-7 Parametric

Parameter NameAttribute value
Objectid113446278
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL2
Maximum collector current (IC)0.15 A
Collector-based maximum capacity3.5 pF
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)300
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment0.15 W
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
VCEsat-Max0.5 V

2SA1687T-7 Related Products

2SA1687T-7 2SA1687S-6 2SA1687 2SC4446
Description 2SA1687T-7 2SA1687S-6 TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),SOT-23 TRANSISTOR,BJT,NPN,50V V(BR)CEO,50MA I(C),SOT-23
Reach Compliance Code compliant compli compli compli
Maximum collector current (IC) 0.15 A - 0.15 A 0.05 A
Configuration SINGLE - Single Single
Minimum DC current gain (hFE) 300 - 135 135
Maximum operating temperature 150 °C - 150 °C 150 °C
Polarity/channel type PNP - PNP NPN
Maximum power dissipation(Abs) 0.15 W - 0.15 W 0.15 W
surface mount YES - YES YES
Nominal transition frequency (fT) 130 MHz - 130 MHz 130 MHz
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