Ordering number:ENN2798A
PNP Epitaxial Planar Silicon Transistors
2SA1688
High-Frequency
General-Purpose Amplifier Applications
Applications
· Ideally suited for use in FM RF amplifiers, mixers,
oscillators. converters, and IF amplifiers.
Package Dimensions
unit:mm
2059B
[2SA1688]
0.425
0.3
3
0 to 0.1
Features
· High power gain : PG=22dB typ (f=100MHz).
· Ultrasmall-sized package permitting 2SA1688-
applied sets to be made small and slim.
2.1
1.250
0.425
1
2
0.65 0.65
2.0
0.3
0.9
0.6
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
1 : Base
2 : Emitter
3 : Collector
SANYO : MCP
Ratings
–30
–20
–5
–30
150
150
–55 to +150
Unit
V
V
V
mA
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Base-to-Collector Time Constant
Voltage Gain
Noise Figure
Symbol
ICBO
IEBO
hFE
fT
Cre
rbb’ Cc
PG
NF
VCB=–10V, IE=0
VEB=–4V, IC=0
VCE=–6V, IC=–1mA
VCE=–6V, IC=–1mA
VCB=–6V, f=1MHz
VCE=–6V, IC=–1mA, f=31.9MHz
See specified Test Circuit,
VCE=–6V, IC=–1mA, f=100MHz
60*
150
230
1.1
11
22
2.5
1.7
20
Conditions
Ratings
min
typ
max
–0.1
–0.1
270*
MHz
pF
ps
dB
dB
Unit
µA
µA
* : The 2SA1688 is classified by 1mA h
FE
as follows :
Rank
hFE
3
60 to 120
4
90 to 180
5
135 to 270
Marking : E
h
FE
rank : 3, 4, 5
For CP package version, use the 2SA1656.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/40196TS (KOTO) 8-4120/N248MO, TS No.2798-1/5
0.2
0.15
2SA1688
NF, PG Test Circuit
to 5pF
L3 L2
0.01µF
VCE
OUTPUT
50Ω
to 22pF
to 22 to 30pF
pF
INPUT 50Ω
to 30pF
L1
0.01µF
VBE
L1 : 1mmØ plated wire 10mmØ 5 T, tap : 2T from VBE side
L2 : 1mmØ plated wire 10mmØ 7 T, tap : 1T from VCE side
L3 : 1mmØ enamel wire 10mmØ 3 T
--10
IC -- VCE
--70
µ
A
--100
IB -- VBE
VCE=--6V
Collector Current, IC – mA
--8
--60
µ
A
--80
--50µA
--6
Base Current, IB –
µA
--40µA
--60
--4
--30µA
--20µA
--40
--2
--10µA
IB=0
0
--2
--4
--6
--8
--10
ITR04133
--20
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
ITR04134
Collector-to-Emitter Voltage, VCE – V
1000
7
5
Base-to-Emitter Voltage, VBE – V
1000
hFE -- IC
f T -- IC
Gain-Bandwidth Product, fT – MHz
7
5
VCE=--12V
--6
V
--3
V
DC Current Gain, hFE
3
2
VCE=--12V
--3V
--6V
3
2
100
7
5
3
2
100
7
10
--0.1
2
3
5
--1.0
2
3
5
--10
2
3
5
5
--1.0
2
3
5
7
--10
2
3
5
Collector Current, IC – mA
2
ITR04135
3
Collector Current, IC – mA
ITR04136
Cre -- VCB
Base-to-Collector Time Constant, Cre -- pF
f=1MHz
rbb 'Cc -- IC
f=31.9MHz
Reverse Transfer Capacitance, Cre -- pF
2
10
7
5
3
2
100
7
5
3
1.0
7
5
3
2
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
3
5
10
7
5
3
2
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
V
CE =
V
--6
--12V
2
3
--3
V
2
5
Collector-to-Base Voltage, VCB -- V
ITR04137
Collector Current, IC -- mA
ITR04138
No.2798-2/5
2SA1688
--10
7
5
VCE(sat) -- IC
200
PC -- Ta
Collector-to-Emitter
Saturation Voltage, VCE (sat) –V
Collector Dissipation, P
C
– mW
3
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
--0.1
160
150
IC
/I
B =2
0
10
120
80
5
40
0
2
3
5
7 --1.0
2
3
5
7 --10
2
0
20
40
60
80
100
120
140
160
Collector Current, IC – mA
2
ITR04139
Ambient Temperature, Ta – ˚C
2
5
3
2
ITR04140
Input Admittance,
y
ie -- IC
f=1.0MHz
VCE=--6V
Output Admittance,
y
oe -- IC
f=1.0MHz
VCE=--6V
5
3
2
1.0
7
5
100
7
c ie
g ie
5
g oe
goe --
µS
2
gie -- mS
cie -- pF
3
2
3
10
7
5
3
2
7
5
3
2
0.1
7
5
3
2
5
7
--1.0
2
3
5
7
10
7
5
3
2
--10
ITR04141
5
3
2
1.0
5
7
--1.0
2
3
5
1.0
--10
ITR04142
7
100
7
5
3
c oe
5
3
2
Input Admittance,
y
ie -- IC
f=10MHz
VCE=--6V
Collector Current, IC -- mA
100
7
5
3
2
Output Admittance,
y
oe -- IC
f=10MHz
VCE=--6V
Collector Current, IC -- mA
goe --
µS
gie -- mS
cie -- pF
1.0
7
100
7
10
7
5
10
7
5
3
5
3
2
5
c ie
3
3
2
2
c oe
2
1.0
--10
ITR04144
7
5
3
2
0.1
5
7
--1.0
2
3
5
100
7
5
3
2
Input Admittance,
y
ie -- IC
f=100MHz
VCE=--6V
Collector Current, IC -- mA
10
--10
ITR04143
7
100
7
5
3
1.0
5
7
--1.0
2
3
5
5
3
2
Output Admittance,
y
oe -- IC
f=100MHz
VCE=--6V
Collector Current, IC -- mA
coe
c ie
2
goe -- mS
gie -- mS
10
7
10
7
cie -- pF
1.0
7
5
3
7
goe
5
3
2
g
ie
5
3
2
1.0
3
5
7
--1.0
5
3
2
2
1.0
--10
ITR04145
7
0.1
3
5
7
--1.0
2
3
5
2
3
5
Collector Current, IC -- mA
Collector Current, IC -- mA
0.1
--10
ITR04146
7
No.2798-3/5
coe -- pF
1.0
coe -- pF
g oe
2
g
ie
coe -- pF
10
2SA1688
3
2
Forward Transfer Admittance,
y
fe -- IC
f=100MHz
VCE=--6V
3
2
100
7
5
3
2
Reverse Transfer Admittance,
y
re -- IC
f=100MHz
VCE=--6V
3
2
100
7
5
1.0
7
--c re
1.0
7
gfe -- mS
bfe -- mS
gre -- mS
3
2
10
7
5
3
2
3
5
7
--1.0
g fe
--b
fe
3
2
10
7
5
3
2
3
5
2
--10
ITR04147
7
5
3
3
2
3
2
--gre
0.1
7
5
3
3
5
7
--1.0
2
3
5
0.1
7
5
3
--10
ITR04148
7
10
7
5
Collector Current, IC -- mA
5
3
2
Collector Current, IC -- mA
10
7
5
3
2
Input Admittance,
y
ie -- IC
Output Admittance,
y
oe -- IC
cie
2
coe
3
2
cie -- pF
10
7
5
3
2
7
5
1.0
7
5
1.0
7
goe
5
3
2
0.1
gie
3
3
2
2
1.0
7
--1.0
2
3
5
7
--10
2
1.0
0.1
7
--1.0
2
3
5
7
--10
2
5
3
2
Forward Transfer Admittance,
y
fe -- IC
Collector-to-Emitter Voltage, VCE -- V
ITR04149
5
3
5
3
2
Reverse Transfer Admittance,
y
re -- IC
Collector-to-Emitter Voltage, VCE -- V
ITR04150
5
3
2
gfe
--bfe
2
--cre
1.0
1.0
7
5
3
gfe -- mS
bfe -- mS
7
5
3
2
7
5
3
2
7
5
3
2
--gre
2
0.1
7
0.1
7
5
7
--1.0
2
3
5
7
--10
2
1.0
7
--1.0
2
3
5
7
--10
2
1.0
5
Collector-to-Emitter Voltage, VCE -- V
ITR04151
32
Collector-to-Emitter Voltage, VCE -- V
ITR04152
PG, NF -- IC
See specified Test Circuit.
f=100MHz
VCE=--6V
28
Power Gain, PG -- dB
PG
24
20
6
4
NF
2
3
5
7
--1.0
2
3
5
Collector Current, IC -- mA
0
--10
ITR04153
7
Noise Figure, NF -- dB
No.2798-4/5
cre -- pF
10
10
gre -- mS
coe -- pF
10
goe -- mS
gie -- mS
cre -- pF
5
5
2SA1688
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2003. Specifications and information herein are subject
to change without notice.
PS No.2798-5/5
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