2SA1031, 2SA1032
Silicon PNP Epitaxial
Application
•
Low frequency low noise amplifier
•
Complementary pair with 2SC458 (LG) and 2SC2310
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1031, 2SA1032
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
Tstg
2SA1031
–30
–30
–5
–100
100
300
150
–55 to +150
2SA1032
–55
–50
–5
–100
100
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
2
2SA1031, 2SA1032
Electrical Characteristics
(Ta = 25°C)
2SA1031
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
*
1
Min
–30
–30
–5
—
—
100
—
—
200
—
—
Typ
—
—
—
—
—
—
—
—
280
3.3
—
Max
—
—
—
–0.5
–0.5
500
–0.8
–0.2
—
4.0
5
2SA1032
Min
–55
–50
–5
—
—
100
—
—
200
—
—
Typ
—
—
—
—
—
—
—
—
280
3.3
—
Max
—
—
—
–0.5
–0.5
320
–0.8
–0.2
—
4.0
5
V
V
MHz
pF
dB
Unit
V
V
V
µA
µA
Test conditions
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA, R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –18 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CE
= –12 V,
I
C
= –2 mA
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
V
CE
= –6 V,
I
C
= –0.1 mA,
R
g
= 500
Ω,
f = 120 Hz
Base to emitter voltage V
BE
Collector to emitter
saturation voltage
V
CE(sat)
Gain bandwidth product f
T
Collector output
capacitance
Noise figure
Cob
NF
Note:
1. The 2SA1031 and 2SA1032 are grouped by h
FE
as follows.
B
C
160 to 320
160 to 320
D
250 to 500
—
100 to 200
100 to 200
2SA1031
2SA1032
3
2SA1031, 2SA1032
Maximum Collector Dissipation Curve
Collector Power Dissipation P
C
(mW)
300
Collector Current I
C
(mA)
Typical Output Characteristics (1)
–10
–25
–8
–20
–6
–4
–15
–10
–5
µA
I
B
= 0
0
100
150
50
Ambient Temperature Ta (°C)
0
–0.2
–0.4
–0.6
–0.8
–1.0
Collector Emitter Voltage V
CE
(V)
200
100
–2
Typical Output Characteristics (2)
–10
–25
Collector Current I
C
(mA)
Collector Current I
C
(mA)
–8
–20
–15
–4
–5
Typical Transfer Characteristics
V
CE
= –5 V
–4
–10
–5
µA
I
B
= 0
–2
–2
–1
0
–5
–10
–15
–20
–25
0
–0.2
–0.4
–0.6
25
–0.8
–6
–3
Ta = 75
°C
–1.0
Collector Emitter Voltage V
CE
(V)
Base to Emitter Voltage V
BE
(V)
4
2SA1031, 2SA1032
DC Current Transfer Ratio vs.
Collector Current
700
600
V
CE
= –5 V
Gain Bandwidth Product f
T
(MHz)
DC Current Transfer Ratio h
FE
500
400
V
CE
= –10 V
Gain Bandwidth Product vs.
Collector Current
500
400
300
200
300
100
200
–0.01
–0.1
–1.0
–10
–100
0
–0.5
–1.0
–2
–5
–10
–20
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Collector to Emitter Saturation Voltage V
CE(sat)
(V)
Collector to Emitter Saturation
Voltage vs. Collector Current
–0.28
–0.24
–0.20
–0.16
–0.12
–0.08
–0.04
0
–1
–2
–5
–10
–20
–50 –100
Collector Current I
C
(mA)
I
C
= 10 I
B
5
°
C
=7
Ta
25
5