2SA4983 datasheet, PDF - EEWORLD Datasheet

2SA4983: Description2SA4983; CategoryDiscrete semiconductor The transistor; File Size124KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2SA4983 Overview

2SA4983

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
Maximum collector current (IC)	1 A
Collector-based maximum capacity	15 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	0.25 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
VCEsat-Max	0.24 V
Base Number Matches	1

	2SA4983
Description	2SA4983
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
Maximum collector current (IC)	1 A
Collector-based maximum capacity	15 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	0.25 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
VCEsat-Max	0.24 V
Base Number Matches	1

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