Power Bipolar Transistor, 0.1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
| Parameter Name | Attribute value |
| Objectid | 1417100900 |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.1 A |
| Collector-emitter maximum voltage | 200 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 160 |
| JEDEC-95 code | TO-126 |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 150 MHz |
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