Power Transistors
2SB0941, 2SB0941A
(2SB941, 2SB941A)
Silicon PNP epitaxial planar type
0.7
±0.1
For low-frequency power amplification
Complementary to 2SD1266 and 2SD1266A
I
Features
•
High forward current transfer ratio h
FE
which has satisfactory
linearity
•
Low collector to emitter saturation voltage V
CE(sat)
•
Full-pack package which can be installed to the heat sink with one
screw
Unit: mm
10.0
±0.2
5.5
±0.2
4.2
±0.2
2.7
±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
7.5
±0.2
16.7
±0.3
φ
3.1
±0.1
I
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
Collector to base
voltage
Collector to
emitter voltage
2SB0941
−60
−80
−60
−80
−5
−5
−3
35
2
2SB0941A
2SB0941
2SB0941A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
T
C
= 25°C
T
a
= 25°C
Junction temperature
Storage temperature
T
stg
I
Electrical Characteristics
T
C
=
25°C
Parameter
Symbol
I
CES
Collector cutoff
current
2SB0941
nt
in
2SB0941A
2SB0941
2SB0941A
is
co
Collector cutoff
current
I
CEO
I
EBO
/D
Emitter cutoff current
Collector to emitter
voltage
ce
2SB0941
V
CEO
an
2SB0941A
en
Forward current transfer ratio
h
FE1 *
h
FE2
V
BE
f
T
ai
Base to emitter voltage
M
Pl
e
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
V
CE(sat)
t
on
t
stg
t
f
Note) *: Rank classification
Rank
h
FE1
Q
70 to 150
P
120 to 250
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
Solder Dip
(4.0)
1.4
±0.1
1.3
±0.2
14.0
±0.5
4.2
±0.2
0.8
±0.1
0.5
+0.2
–0.1
Rating
Unit
V
2.54
±0.3
5.08
±0.5
V
1 2 3
V
A
A
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F Package
W
150
°C
°C
−55
to
+150
Conditions
Min
Typ
Max
Unit
µA
µA
ue
V
CE
=
−60
V, V
BE
= 0
V
CE
=
−80
V, V
BE
= 0
V
CE
=
−60
V, I
B
= 0
V
CE
=
−30
V, I
B
= 0
V
EB
=
−5
V, I
C
= 0
−200
−200
−300
−300
−1
mA
V
I
C
=
−30
mA, I
B
= 0
−60
70
−80
10
V
CE
=
−4
V, I
C
=
−1
A
250
nt
V
CE
=
−4
V, I
C
=
−3
A
V
CE
=
−4
V, I
C
=
−3
A
−1.8
V
I
C
=
−3
A, I
B
=
−
0.375 A
−1.2
V
V
CE
=
−10
V, I
C
=
−
0.5 A, f = 10 MHz
I
C
=
−1
A, I
B1
=
−
0.1 A, I
B2
= 0.1 A
30
0.5
1.2
0.3
MHz
µs
µs
µs
Ordering can be made by the common rank (PQ rank h
FE1
= 70 to 250) in the
rank classification.
Note.) The Part numbers in the Parenthesis show conventional part number.
1
2SB0941, 2SB0941A
P
C
T
a
50
–6
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
–5
Power Transistors
I
C
V
CE
–10
V
CE
=–4V
I
C
V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
I
B
=–100mA
–4
–80mA
–60mA
–3
–40mA
–30mA
–20mA
30
Collector current I
C
(A)
40
–8
–6
25˚C
T
C
=100˚C
–4
–25˚C
20
(1)
–2
10
(3)
(4)
0
0
20
40
60
(2)
–1
–16mA
0
–2
–4
–6
–12mA
–8mA
–4mA
–2
0
80 100 120 140 160
0
–8
–10
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature T
a
(˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=10
–30
–10
–3
–1
10000
h
FE
I
C
10000
V
CE
=–4V
3000
1000
300
100
30
10
3
f
T
I
C
V
CE
=–5V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
25˚C
T
C
=100˚C
–25˚C
– 0.3
T
C
=100˚C
–25˚C
25˚C
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
Transition frequency f
T
(MHz)
–1
–3
–10
3000
–1
–3
–10
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
–100
–30
10
3
Non repetitive pulse
T
C
=25˚C
R
th(t)
t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
2
–10
I
CP
–3
–1
DC
I
C
t=1ms
10ms
10
(2)
– 0.3
– 0.1
1
– 0.03
– 0.01
–1
2SB0941A
2SB0941
10
–1
–3
–10
–30
–100 –300 –1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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