Power Transistors
2SB0941, 2SB0941A
Silicon PNP epitaxial planar type
0.7
±0.1
For low-frequency power amplification
Complementary to 2SD1266 and 2SD1266A
I
Features
•
High forward current transfer ratio h
FE
which has satisfactory
linearity
•
Low collector to emitter saturation voltage V
CE(sat)
•
Full-pack package which can be installed to the heat sink with one
screw
16.7
±0.3
Unit: mm
10.0
±0.2
5.5
±0.2
4.2
±0.2
2.7
±0.2
7.5
±0.2
φ
3.1
±0.1
4.2
±0.2
I
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector to base
voltage
Collector to
emitter voltage
2SB0941
2SB0941A
2SB0941
2SB0941A
V
EBO
I
CP
I
C
T
C
= 25°C
T
a
= 25°C
T
j
T
stg
P
C
V
CEO
Symbol
V
CBO
Rating
−60
−80
−60
−80
−5
−5
−3
35
2
150
−55
to
+150
°C
°C
V
A
A
W
V
Unit
V
Solder Dip
(4.0)
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
14.0
±0.5
0.8
±0.1
2.54
±0.3
5.08
±0.5
1 2 3
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F Package
Junction temperature
Storage temperature
I
Electrical Characteristics
T
C
=
25°C
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB0941
2SB0941A
h
FE1 *
h
FE2
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Note) *: Rank classification
Rank
h
FE1
Q
70 to 150
P
120 to 250
Ordering can be made by the common rank (PQ rank h
FE1
= 70 to 250) in the
rank classification.
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
V
CE
=
−4
V, I
C
=
−1
A
V
CE
=
−4
V, I
C
=
−3
A
V
CE
=
−4
V, I
C
=
−3
A
I
C
=
−3
A, I
B
=
−
0.375 A
V
CE
=
−10
V, I
C
=
−
0.5 A, f = 10 MHz
I
C
=
−1
A, I
B1
=
−
0.1 A, I
B2
= 0.1 A
30
0.5
1.2
0.3
2SB0941
2SB0941A
2SB0941
2SB0941A
I
EBO
V
CEO
I
CEO
Symbol
I
CES
Conditions
V
CE
=
−60
V, V
BE
= 0
V
CE
=
−80
V, V
BE
= 0
V
CE
=
−30
V, I
B
= 0
V
CE
=
−60
V, I
B
= 0
V
EB
=
−5
V, I
C
= 0
I
C
=
−30
mA, I
B
= 0
−60
−80
70
10
−1.8
−1.2
V
V
MHz
µs
µs
µs
250
Min
Typ
Max
−200
−200
−300
−300
−1
mA
V
µA
Unit
µA
Forward current transfer ratio
1
2SB0941, 2SB0941A
P
C
T
a
50
–6
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
–5
Power Transistors
I
C
V
CE
–10
V
CE
=–4V
I
C
V
BE
Collector power dissipation P
C
(W)
Collector current I
C
(A)
I
B
=–100mA
–4
–80mA
–60mA
–3
–40mA
–30mA
–20mA
30
Collector current I
C
(A)
40
–8
–6
25˚C
T
C
=100˚C
–4
–25˚C
20
(1)
–2
10
(3)
(4)
0
0
20
40
60
(2)
–1
–16mA
0
–2
–4
–6
–12mA
–8mA
–4mA
–2
0
80 100 120 140 160
0
–8
–10
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
Ambient temperature T
a
(˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=10
–30
–10
–3
–1
10000
h
FE
I
C
10000
V
CE
=–4V
3000
1000
300
100
30
10
3
f
T
I
C
V
CE
=–5V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
1000
300
100
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
25˚C
T
C
=100˚C
–25˚C
– 0.3
T
C
=100˚C
–25˚C
25˚C
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
Transition frequency f
T
(MHz)
–1
–3
–10
3000
–1
–3
–10
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
Area of safe operation (ASO)
–100
–30
10
3
Non repetitive pulse
T
C
=25˚C
R
th(t)
t
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
Collector current I
C
(A)
10
2
–10
I
CP
–3
–1
DC
I
C
t=1ms
10ms
10
(2)
– 0.3
– 0.1
1
– 0.03
– 0.01
–1
2SB0941A
2SB0941
10
–1
–3
–10
–30
–100 –300 –1000
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Collector to emitter voltage V
CE
(V)
Time t (s)
2
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