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2SA503

Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,600MA I(C),TO-39
CategoryDiscrete semiconductor    The transistor   
File Size168KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SA503 Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,600MA I(C),TO-39

2SA503 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.6 A
ConfigurationSingle
Minimum DC current gain (hFE)30
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)130 MHz
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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