Transistors
2SA1034, 2SA1035
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency and low-noise amplification
Complementary to 2SC2405, 2SC2406
■
Features
•
Low noise voltage NV
•
High forward current transfer ratio h
FE
•
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
1
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
2
(0.65)
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10˚
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SA1034
2SA1035
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Symbol
V
CBO
Rating
−35
−55
−35
−55
−5
−50
−100
200
150
−55
to
+150
V
mA
mA
mW
°C
°C
V
Unit
V
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Collector-emitter voltage 2SA1034
(Base open)
2SA1035
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol:
•
2SA1034: F
•
2SA1035: H
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Base-emitter voltage
*1
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*2
Collector-emitter saturation voltage
*1
Transition frequency
Noise voltage
2SA1034
2SA1035
2SA1034
2SA1035
V
EBO
V
BE
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
NV
I
E
= −10 µA,
I
C
=
0
V
CE
= −1
V, I
C
= −100
mA
V
CB
= −10
V, I
E
=
0
V
CE
= −10
V, I
B
=
0
V
CE
= −5
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CB
= −5
V, I
E
=
2 mA, f
=
200 MHz
V
CE
= −10
V, I
C
= −1
mA, G
V
=
80 dB
R
g
=
100 kΩ, Function
=
FLAT
200
150
180
V
CEO
I
C
= −2
mA, I
B
=
0
Symbol
V
CBO
Conditions
I
C
= −10 µA,
I
E
=
0
Min
−35
−55
−35
−55
−5
−
0.7
−1.0
−
0.1
−1
700
−
0.6
V
V
µA
µA
V
MHz
mV
V
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
R
180 to 360
S
260 to 520
T
360 to 700
0 to 0.1
0.4
±0.2
5˚
Publication date: January 2003
SJC00010BED
1
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•
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