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2SA504

Description
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
CategoryDiscrete semiconductor    The transistor   
File Size70KB,1 Pages
ManufacturerMicro Electronics
Websitehttp://www.microelectr.com.hk
Download Datasheet Parametric View All

2SA504 Overview

Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-39

2SA504 Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
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