Power Transistors
2SB0943
(2SB943)
Silicon PNP epitaxial planar type
Unit: mm
0.7
±0.1
For power switching
Complementary to 2SD1268
I
Features
10.0
±0.2
5.5
±0.2
4.2
±0.2
2.7
±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
7.5
±0.2
Solder Dip
(4.0)
14.0
±0.5
•
Low collector to emitter saturation voltage V
CE(sat)
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Large collector current I
C
•
Full-pack package which can be installed to the heat sink with one
screw
I
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
CP
I
C
P
C
T
j
V
EBO
Collector to base voltage
−130
−80
−7
−6
−3
30
2
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
T
C
= 25°C
T
a
= 25°C
Junction temperature
Storage temperature
T
stg
nt
in
Parameter
ue
I
Electrical Characteristics
T
C
=
25°C
Symbol
I
CBO
I
EBO
h
FE1
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
/D
V
CEO
ce
Forward current transfer ratio
an
h
FE2 *
en
Collector to emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
t
on
t
f
nt
Base to emitter saturation voltage
ai
Transition frequency
M
Pl
e
Turn-on time
Storage time
Fall time
t
stg
Note) *: Rank classification
Rank
h
FE2
Q
90 to 180
P
130 to 260
pl d in
as
an c
e
ed lud
pl
vi
an m m es
si
tf
ed ain ai fo
ol
lo dis dis ten nte llow
ht w c
tp in o co an nan in
:// g nt n ce c g
pa U in tin t e fo
na RL ue ue ype typ ur
so a d t d
e Pr
od
ni bo yp typ
c. u e e
uc
ne t l
d
tl
at
ife
t/s e
cy
c/ st
en in
cl
e
fo
st
rm
ag
at
e.
io
n.
1.4
±0.1
1.3
±0.2
0.8
±0.1
0.5
+0.2
–0.1
2.54
±0.3
16.7
±0.3
φ
3.1
±0.1
Rating
Unit
V
V
V
A
A
5.08
±0.5
4.2
±0.2
1 2 3
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F Package
W
150
°C
°C
−55
to
+150
Conditions
Min
Typ
Max
−10
−50
Unit
µA
V
µA
V
CB
=
−100
V, I
E
= 0
V
EB
=
−5
V, I
C
= 0
I
C
=
−10
mA, I
B
= 0
co
−80
45
90
is
V
CE
=
−2
V, I
C
=
−
0.1 A
V
CE
=
−2
V, I
C
=
−
0.5 A
I
C
=
−2
A, I
B
=
−
0.1 A
I
C
=
−2
A, I
B
=
−
0.1 A
260
−
0.5
−1.5
V
V
V
CE
=
−10
V, I
C
=
−
0.5 A, f = 10 MHz
30
MHz
µs
µs
µs
I
C
=
−
0.5 A, I
B1
=
−50
mA, I
B2
= 50 mA
0.3
1.1
0.3
Note.) The Part number in the Parenthesis shows conventional part number.
1
2SB0943
P
C
T
a
50
–6
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
T
C
=25˚C
–5
Power Transistors
I
C
V
CE
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
I
C
/I
B
=20
–30
–10
–3
–1
V
CE(sat)
I
C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
40
I
B
=–100mA
–4
–80mA
–60mA
–3
–40mA
–30mA
–2
–20mA
–16mA
–12mA
–8mA
–4mA
0
30
(1)
20
– 0.3
– 0.1
T
C
=100˚C
–25˚C
25˚C
10
(3)
(4)
0
0
20
40
(2)
–1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
60
80 100 120 140 160
0
2
4
6
8
10
–1
–3
–10
Ambient temperature T
a
(˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
I
C
–100
10000
I
C
/I
B
=20
–30
–10
–3
–1
T
C
=–100˚C
–25˚C
25˚C
h
FE
I
C
10000
V
CE
=–2V
3000
1000
300
100
30
10
3
f
T
I
C
V
CE
=–10V
f=10MHz
T
C
=25˚C
Base to emitter saturation voltage V
BE(sat)
(V)
Forward current transfer ratio h
FE
1000
300
100
–25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
25˚C
T
C
=100˚C
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
Transition frequency f
T
(MHz)
–1
–3
–10
3000
–1
–3
–10
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
C
ob
V
CB
10000
100
I
E
=0
f=1MHz
T
C
=25˚C
30
t
on
, t
stg
, t
f
I
C
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(–I
B1
=I
B2
)
V
CC
=–50V
T
C
=25˚C
Area of safe operation (ASO)
–100
–30
Non repetitive pulse
T
C
=25˚C
Collector output capacitance C
ob
(pF)
3000
1000
300
100
30
10
3
1
– 0.1 – 0.3
Switching time t
on
,t
stg
,t
f
(
µs
)
10
3
1
0.3
0.1
0.03
0.01
Collector current I
C
(A)
–10
–3
–1
I
CP
t=0.5ms
I
C
1ms
10ms
DC
t
stg
t
on
t
f
– 0.3
– 0.1
– 0.03
– 0.01
–1
–1
–3
–10
–30
–100
0
– 0.8
–1.6
–2.4
–3.2
–3
–10
–30
–100 –300 –1000
Collector to base voltage V
CB
(V)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
2
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
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