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2SA1084E

Description
100mA, 90V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size55KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SA1084E Overview

100mA, 90V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN

2SA1084E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage90 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)90 MHz
Base Number Matches1
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

2SA1084E Related Products

2SA1084E 2SA1085D 2SA1085E 2SA1083D 2SA1083E 2SA1084D
Description 100mA, 90V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN 100mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN 100mA, 120V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN 100mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN 100mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN 100mA, 90V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 TO-92(1), 3 PIN CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 TO-92(1), 3 PIN TO-92(1), 3 PIN
Contacts 3 3 3 3 3 3
Reach Compliance Code unknow compli unknow unknow compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 90 V 120 V 120 V 60 V 60 V 90 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 400 250 400 250 400 250
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 90 MHz 90 MHz 90 MHz 90 MHz 90 MHz 90 MHz
Base Number Matches 1 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C - 125 °C 150 °C 150 °C

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