2SA1083, 2SA1084, 2SA1085
Silicon PNP Epitaxial
Application
•
Low frequency low noise amplifier
•
Complementary pair with 2SC2545, 2SC2546 and 2SC2547
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1083, 2SA1084, 2SA1085
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
P
C
Tj
Tstg
2SA1083
–60
–60
–5
–100
100
400
150
–55 to +150
2SA1084
–90
–90
–5
–100
100
400
150
–55 to +150
2SA1085
–120
–120
–5
–100
100
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
2
2SA1083, 2SA1084, 2SA1085
Electrical Characteristics
(Ta = 25°C)
2SA1083
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
Symbol Min
V
(BR)CBO
–60
V
(BR)CEO
–60
V
(BR)EBO
–5
I
CBO
I
EBO
—
—
250
—
—
—
—
—
Typ
—
—
—
—
—
—
—
Max
—
—
—
–0.1
–0.1
800
–0.2
2SA1084
Min
–90
–90
–5
—
—
250
—
—
—
—
—
Typ Max
—
—
—
—
—
—
—
—
—
—
–0.1
–0.1
800
–0.2
2SA1085
Min
Typ Max
—
—
—
–0.1
–0.1
800
–0.2
V
V
Unit Test conditions
V
V
V
µA
µA
I
C
= –10
µA,
I
E
= 0
I
C
= –1 mA,
R
BE
=
∞
I
E
= –10
µA,
I
C
= 0
V
CB
= –50 V, I
E
= 0
V
EB
= –2 V, I
C
= 0
V
CE
= –12 V,
I
C
= –2 mA
I
C
= –10 mA,
I
B
= –1 mA
V
CE
= –12 V,
I
C
= –2 mA
–120 —
–120 —
–5
—
—
250
—
—
—
—
—
—
—
—
—
—
DC current transfer ratio h
FE
*
1
Collector to emitter
saturation voltage
Base to emitter voltage
V
CE(sat)
V
BE
–0.6 —
90
3.5
0.5
—
—
—
–0.6 —
90
3.5
0.5
—
—
—
–0.6 —
90
3.5
0.5
—
—
—
Gain bandwidth product f
T
Collector output
capacitance
Noise voltage reffered
to input
Cob
e
n
MHz V
CE
= –12 V,
I
C
= –2 mA
pF
nV/
√Hz
V
CB
= –10 V, I
E
= 0,
f = 1 MHz
V
CE
= –6V,
I
C
= –10 mA,
f = 1 kHz,
R
g
= 0,
∆f
= 1Hz
Note:
D
1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by h
FE
as follows.
E
400 to 800
250 to 500
3
2SA1083, 2SA1084, 2SA1085
Maximum Collector Dissipation Curve
Collector power dissipation P
C
(mW)
600
Collector current I
C
(mA)
–50
–1
Typical Output Characteristics (1)
40
–1
–40
20
0
–10
–80
–60
400
–30
P
–40
C
=0
.4 W
–20
200
–20
µA
–10
I
B
= 0
0
50
100
150
Ambient Temperature Ta (°C)
0
–4
–8
–12
–16
–20
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics (2)
–20
Typicaol Transfer Characteristics
–10
V
CE
= –12 V
Collector Current I
C
(mA)
–5
–4
0
–35
–30
–25
–20
–15
Collector current I
C
(mA)
–16
–12
–2
–1.0
–0.5
–8
–10
–5
µ
A
I
B
= 0
–4
–0.2
–0.1
0
–0.2
–0.4
–0.6
–0.8
Base to Emitter Voltage V
BE
(V)
–1.0
0
–4
–8
–12
–16
–20
Collector to Emitter Voltage V
CE
(V)
4
2SA1083, 2SA1084, 2SA1085
DC Current Transfer Ratio vs.
Collector Current
Collector to emitter saturation voltage
V
CE(sat)
(V)
5,000
DC current teransfer ratio h
FE
V
CE
= –12 V
Pulse
–1.0
–0.5
Collector to Emitter Saturation
Voltage vs. Collector Current
I
C
= 10 I
B
2,000
1,000
500
200
100
50
–0.1
–0.2
–0.1
–0.05
–0.02
–0.01
–1
–0.3 –1.0 –3
–10 –30
Collector Current I
C
(mA)
–100
–2
–5 –10 –20
–50 –100
Collector Current I
C
(mA)
Base to Emitter Saturation Voltage
vs. Collector Current
–10
Base to emitter saturation voltage
V
BE(sat)
(V)
–5
2,000
Gain bandwidth product f
T
(MHz)
I
C
= 10 I
B
Gain Bandwidth Product vs.
Collector Current
V
CE
= –12 V
1,000
500
–2
–1.0
–0.5
200
100
50
–0.2
–0.1
–1
–2
–5 –10 –20
–50 –100
Collector Current I
C
(mA)
20
–1
–2
–5 –10 –20
–50 –100
Collector Current I
C
(mA)
5
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