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2SA537C

Description
Small Signal Bipolar Transistor, PNP
CategoryDiscrete semiconductor    The transistor   
File Size44KB,1 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Download Datasheet Parametric Compare View All

2SA537C Overview

Small Signal Bipolar Transistor, PNP

2SA537C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codecompli
ConfigurationSingle
Minimum DC current gain (hFE)80
JESD-609 codee0
Polarity/channel typePNP
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)200 MHz
Base Number Matches1
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2SA537C Related Products

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Description Small Signal Bipolar Transistor, PNP Small Signal Bipolar Transistor, 0.7A I(C), PNP Small Signal Bipolar Transistor, PNP Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, PNP, Silicon, TO-92, PLASTIC, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Is it Rohs certified? incompatible incompatible incompatible conform to incompatible incompatible incompatible
package instruction , , , CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code compli compli compli compli compli compliant compliant
Configuration Single Single Single SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 80 80 50 75 25 25 120
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP
surface mount NO NO NO NO NO NO NO
Base Number Matches 1 1 1 1 1 1 1
JESD-609 code e0 e0 e0 - e0 e0 e0
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 8 MHz 80 MHz 80 MHz -
Maximum collector current (IC) - 0.7 A - 0.05 A 0.15 A 0.15 A 0.1 A
Maximum operating temperature - 175 °C - 150 °C 125 °C 125 °C 150 °C
Maximum power dissipation(Abs) - 0.75 W - 0.25 W 0.4 W 0.4 W 0.35 W
JEDEC-95 code - - - TO-92 TO-92 TO-92 TO-92
JESD-30 code - - - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components - - - 1 1 1 1
Number of terminals - - - 3 3 3 3
Package body material - - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - - ROUND ROUND ROUND ROUND
Package form - - - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Certification status - - - Not Qualified Not Qualified Not Qualified Not Qualified
Terminal form - - - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - - - BOTTOM BOTTOM BOTTOM BOTTOM
Transistor component materials - - - SILICON SILICON SILICON SILICON

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