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PZT2907AT3

Description
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, CASE 318E-04, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size102KB,4 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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PZT2907AT3 Overview

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, CASE 318E-04, 4 PIN

PZT2907AT3 Parametric

Parameter NameAttribute value
MakerRochester Electronics
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)45 ns
PZT2907AT1,
SPZT2907AT1G
Preferred Device
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
Features
http://onsemi.com
NPN Complement is PZT2222AT1
The SOT-223 package can be soldered using wave or reflow
SOT-223 package ensures level mounting, resulting in improved
SOT−223
CASE 318E
STYLE 1
COLLECTOR
2, 4
1
BASE
3
EMITTER
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering eliminating
the possibility of damage to the die.
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
−60
−60
−5.0
−600
Unit
Vdc
Vdc
Vdc
mAdc
MARKING DIAGRAM
AYW
P2F
G
G
1
P2F
A
Y
W
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
T
A
= 25C
Thermal Resistance Junction−to−Ambient
(Note 1)
Lead Temperature for Soldering,
0.0625 from case
Time in Solder Bath
Operating and Storage Temperature Range
Symbol
P
D
R
qJA
T
L
Max
1.5
12
83.3
Unit
W
mW/C
C/W
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
SOT−223
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
SOT−223
(Pb−Free)
Shipping
1,000 / Tape & Reel
1,000 / Tape & Reel
1,000 / Tape & Reel
4,000 / Tape & Reel
4,000 / Tape & Reel
PZT2907AT1
PZT2907AT1G
SPZT2907AT1G
PZT2907AT3
PZT2907AT3G
260
10
−65
to
+150
C
Sec
C
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 713 mm
2
of copper area.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2011
November, 2011
Rev. 9
1
Publication Order Number:
PZT2907AT1/D
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