MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by P2N2222A/D
Amplifier Transistors
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
P2N2222A
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Value
40
75
6.0
600
625
5.0
1.5
12
– 55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
—
—
IEBO
ICEO
IBEX
—
—
—
0.01
10
10
10
20
nAdc
nAdc
nAdc
40
75
6.0
—
—
—
—
10
Vdc
Vdc
Vdc
nAdc
µAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1
P2N2222A
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
hFE
35
50
75
35
100
50
40
VCE(sat)
—
—
VBE(sat)
0.6
—
1.2
2.0
0.3
1.0
Vdc
—
—
—
—
300
—
—
Vdc
—
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
Noise Figure
(IC = 100
m
Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
fT
Cobo
Cibo
hie
2.0
0.25
hre
—
—
hfe
50
75
hoe
5.0
25
rb′Cc
NF
—
—
35
200
150
4.0
ps
dB
300
375
8.0
4.0
—
8.0
1.25
X 10– 4
300
—
—
—
8.0
25
MHz
pF
pF
kΩ
m
mhos
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 30 Vdc, VBE(off) = –2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
td
tr
ts
tf
—
—
—
—
10
25
225
60
ns
ns
ns
ns
1. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
v
v
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
P2N2222A
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+16 V
0
–2 V
1.0 to 100
µs,
DUTY CYCLE
≈
2.0%
1 kΩ
< 2 ns
200
+16 V
0
CS* < 10 pF
–14 V
< 20 ns
1k
1N914
–4 V
CS* < 10 pF
1.0 to 100
µs,
DUTY CYCLE
≈
2.0%
+ 30 V
200
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
1000
700
500
hFE , DC CURRENT GAIN
300
200
TJ = 125°C
25°C
100
70
50
30
20
10
0.1
–55°C
VCE = 1.0 V
VCE = 10 V
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
Figure 3. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 4. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
P2N2222A
200
100
70
50
t, TIME (ns)
30
20
10
7.0
5.0
3.0
2.0
5.0 7.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
500
300
200
100
70
50
30
20
10
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
300
500
t′s = ts – 1/8 tf
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t, TIME (ns)
tf
Figure 5. Turn – On Time
Figure 6. Turn – Off Time
10
8.0
NF, NOISE FIGURE (dB)
IC = 1.0 mA, RS = 150
Ω
500
µA,
RS = 200
Ω
100
µA,
RS = 2.0 kΩ
50
µA,
RS = 4.0 kΩ
RS = OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
10
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
IC = 50
µA
100
µA
500
µA
1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100
0
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)
Figure 8. Source Resistance Effects
30
20
CAPACITANCE (pF)
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 9. Capacitances
Figure 10. Current–Gain Bandwidth Product
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PCB Design
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