28C16A-15I/VS datasheet, PDF - EEWORLD Datasheet

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28C16A-15I/VS: Description2K X 8 EEPROM 5V, 150 ns, PDSO28, 8 X 13.40 MM, PLASTIC, VSOP-28; Categorystorage storage; File Size64KB，8 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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28C16A-15I/VS Overview

2K X 8 EEPROM 5V, 150 ns, PDSO28, 8 X 13.40 MM, PLASTIC, VSOP-28

28C16A-15I/VS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	SOIC
package instruction	8 X 13.40 MM, PLASTIC, VSOP-28
Contacts	28
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum access time	150 ns
Other features	AUTOMATIC WRITE
command user interface	NO
Data polling	YES
Durability	10000 Write/Erase Cycles
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
length	11.8 mm
memory density	16384 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP28,.53,22
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.55 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
width	8 mm
Maximum write cycle time (tWC)	1 ms
Base Number Matches	1

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28C16A

16K (2K x 8) CMOS EEPROM

FEATURES

• Fast Read Access Time—150 ns

• CMOS Technology for Low Power Dissipation

- 30 mA Active

- 100

A Standby

• Fast Byte Write Time—200

s or 1 ms

• Data Retention >200 years

• High Endurance - Minimum 10

Erase/Write Cycles

• Automatic Write Operation

- Internal Control Timer

- Auto-Clear Before Write Operation

- On-Chip Address and Data Latches

• Data polling

• Chip Clear Operation

• Enhanced Data Protection

- V

Detector

- Pulse Filter

- Write Inhibit

• Electronic Signature for Device Identiﬁcation

• 5-Volt-Only Operation

• Organized 2Kx8 JEDEC Standard Pinout

• 24-pin Dual-In-Line Package

• 32-pin PLCC Package

• 28-pin Thin Small Outline Package (TSOP)

8x20mm

• 28-pin Very Small Outline Package (VSOP)

8x13.4mm

• Available for Extended Temperature Ranges:

- Commercial: 0˚C to +70˚C

- Industrial: -40˚C to +85˚C

PACKAGE TYPES

Vcc

• Pin 1 indicator on PLCC on top of package

Vcc

I/O1

I/O2

Vss

I/O3

I/O4

I/O5

A10

I/O7

I/O6

I/O5

I/O4

I/O3

I/O2

I/O1

I/O0

I/O1

I/O2

•1

Vcc

A10

I/O7 A0

I/O6 NC

I/O5 I/O0

I/O4

I/O3

A10

I/O7

I/O6

PLCC

DESCRIPTION

The Microchip Technology Inc. 28C16A is a CMOS 16K

non-volatile electrically Erasable PROM. The 28C16A

is accessed like a static RAM for the read or write

cycles without the need of external components. Dur-

ing a “byte write”, the address and data are latched

internally, freeing the microprocessor address and data

bus for other operations. Following the initiation of

write cycle, the device will go to a busy state and auto-

matically clear and write the latched data using an

internal control timer. To determine when a write cycle

is complete, the 28C16A uses Data polling. Data poll-

ing allows the user to read the location last written to

when the write operation is complete. CMOS design

and processing enables this part to be used in systems

where reduced power consumption and reliability are

required. A complete family of packages is offered to

provide the utmost ﬂexibility in applications.

BLOCK DIAGRAM

I/O0

I/O7

DIP

A10

I/07

I/06

I/05

I/04

I/03

Vss

I/02

I/01

I/00

TSOP

VSOP

Data Protection

Circuitry

Chip Enable/

Output Enable

Control Logic

Auto Erase/Write

Timing

Data

Poll

Input/Output

Buffers

Program Voltage

Generation

A10

Decoder

Y Gating

Decoder

16K bit

Cell Matrix

1996 Microchip Technology Inc.

DS11125G-page 1

This document was created with FrameMaker 4 0 4

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