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2SB1018

Description
TRANSISTOR 7 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size57KB,1 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SB1018 Overview

TRANSISTOR 7 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power

2SB1018 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Shell connectionISOLATED
Maximum collector current (IC)7 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1
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