Power Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
| Parameter Name | Attribute value |
| Objectid | 1916529916 |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | RADIATION HARDENED |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 25 A |
| Maximum drain-source on-resistance | 0.2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AE |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | P-CHANNEL |
| Maximum pulsed drain current (IDM) | 60 A |
| Certification status | Not Qualified |
| Guideline | MILITARY STANDARD (USA) |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| 2N6898TX | 2N6898TXV | |
|---|---|---|
| Description | Power Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Power Field-Effect Transistor, 25A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE |
| Objectid | 1916529916 | 1916529919 |
| package instruction | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | EAR99 | EAR99 |
| Other features | RADIATION HARDENED | RADIATION HARDENED |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V |
| Maximum drain current (ID) | 25 A | 25 A |
| Maximum drain-source on-resistance | 0.2 Ω | 0.2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-204AE | TO-204AE |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | METAL | METAL |
| Package shape | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Polarity/channel type | P-CHANNEL | P-CHANNEL |
| Maximum pulsed drain current (IDM) | 60 A | 60 A |
| Certification status | Not Qualified | Not Qualified |
| Guideline | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) |
| surface mount | NO | NO |
| Terminal surface | TIN LEAD | TIN LEAD |
| Terminal form | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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